Breast cancer is one of the leading fatal diseases for women worldwide who cannot have surgery typically have to rely on systemic chemotherapy to extend their survival. Doxorubicin (DOX) is one of the most commonly used chemotherapeutic agents against breast cancer, but acquired resistance to DOX can seriously impede the efficacy of chemotherapy, leading to poor prognosis and recurrences of cancer. Resveratrol (RES) is a phytoalexin with pharmacological antitumor properties, but its underlying mechanisms are not clearly understood in the treatment of DOX‐resistant breast cancer. We used cell viability assays, cell scratch tests, and transwell assays combined with Western blotting and immunofluorescent staining to evaluate the effects of RES on chemoresistance and the epithelial‐mesenchymal transitions (EMTs) in adriamycin‐resistant MCF7/ADR breast cancer cells, and to investigate its underlying mechanisms. The results showed that a treatment of RES combining with DOX effectively inhibited cell growth, suppressed cell migration, and promoted cell apoptosis. RES reversed EMT properties of MCF7/ADR cells by modulating the connection between SIRT1 and β‐catenin, which provides a hopeful therapeutic avenue to conquer DOX‐resistance and thereby prolong survival rates in breast cancer patients.

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Energy band diagrams are widely utilized to explain the switching mechanism of resistance random access memory (RRAM). However, a precise and quantitative band theory is still lacking in this field. Although HfS2 has good applications in many fields because of its good electrical and optical properties, its applications in RRAM have seldom been reported. In this work, the exfoliated nanosheets of HfS2 were utilized to fabricate memory devices with a structure of Pt/Al/HfS2/p+-Si, which show typical bipolar resistive switching behavior with high switching voltage and a small ratio of high and low resistive states (R-ratio). According to the density functional theory (DFT) calculation results of energy band diagrams, instead of conductive filament formation in other resistive switching materials, the doping of sulfur vacancy (VS) of 3.8% is already enough to change the whole HfS2 layer from the semiconductor to the metal. The transition is caused by the change in the VS doping concentration from low to high, which is the result of the generation and movement of VS under an electric field. The DFT also calculated that HfS2 devices utilizing Indium Tin Oxide as the bottom electrode can show bipolar resistive switching behavior with lower switching voltage and a higher R-ratio than those utilizing p+-Si, which is confirmed by the experimental results. The DFT calculation can be utilized for both explaining the switching mechanism and designing the device structure to optimize the switching characteristics.

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