We present a detailed theoretical study of the influence of linearly polarised intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E 1s and E 2s , on intensity and frequency of the THz radiation has been examined for a GaAs-based system. It is found that E 1s , E 2s and E 2s − E 1s decrease with increasing radiation intensity or with decreasing radiation frequency, which implies that an intense THz field can enhance ionisation of dopants in semiconductors. Our analytical and numerical results show that one of the most important results obtained by A.L.A. Fonseca et al [phys. stat. sol. (b) 186, K57 (1994)] is incorrect.
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