Electricity generation triggered by the ubiquitous water evaporation process provides an intriguing way to harvest energy from water. Meanwhile, natural water evaporation is also a fundamental way to obtain fresh water for human beings. Here, a wafer‐scale nanostructured silicon‐based device that takes advantage of its well‐aligned configuration that simultaneously realizes solar steam generation (SSG) for freshwater collection and hydrovoltaic effect generation for electricity output is developed. An ingenious porous, black carbon nanotube fabric (CNF) electrode endows the device with sustainable water self‐pumping capability, excellent durable conductivity, and intense solar spectrum harvesting. A combined device based on the CNF electrode integrated with nanostructured silicon nanowire arrays (SiNWs) provided an aligned numerous surface‐to‐volume water evaporation interface that enables a recorded continuous short‐circuit current 8.65 mA and a water evaporation rate of 1.31 kg m−2 h−1 under one sun illumination. Such wafer‐scale SiNWs‐based SSG and hydrovoltaic integration devices would unchain the bottleneck of the weak and discontinuous electrical output of hydrovoltaic devices, which inspires other sorts of semiconductor‐based hydrovoltaic device designs to target superior performance.
Balanced charge injection is key to achieving perovskite light-emitting diodes (PeLEDs) with a low efficiency roll-off at a high brightness. The use of zinc oxide (ZnO) with a high electron mobility as the charge transport layers is desirable; however, photoluminescence (PL) quenching of a perovskite on ZnO always occurs. Here, a quasitwo-dimensional perovskite on ZnO is explored to uncover the PL quenching mechanism, mainly ascribed to the deprotonation of ammonium cations on the ZnO film in association with the decomposition of low-dimensional perovskite phases. Surprisingly, crystal planedependent PL quenching results indicate that the deprotonation rate strongly correlates with the crystal orientation of the ZnO surface. We developed a strategy for suppressing perovskite PL quenching by incorporating an atomic layer deposited Al 2 O 3 onto the ZnO film. Consequently, an efficient inverted PeLED was achieved with a maximum external quantum efficiency of 17.7% and a less discernible efficiency roll-off at a high current density.
photovoltaic modules are widely used in ground-mounted solar power plants or rooftop PV installations. [2,3] However, there is increasing emphasis on the visual aesthetics of solar modules, [4,5] such as building-integrated photovoltaics (BIPV), which exhibit the potential to both power and decorate urban architecture owing to their low space requirements. Colored PV panels are typically mounted on the roof or glass facades of buildings which improve the visual aesthetics of the building. Moreover, aesthetically designed PV technology is also popular in productintegrated solar cells, where it can power electronics and simultaneously meet the overall visual design of the product. [6] The light escaping from the cell surface causes a colored appearance due to cell current loss owing to less light absorption. Thus, a tradeoff between colored appearance and device performance should be realized. Therefore, in colored PV panels, it is challenging to improve the visual aesthetics while preserving initial power conversion efficiency (PCE). [7] One promising method is to minimize the reflection range of colored PV cells to meet high color purity and low photon loss.Most PV cells exhibit a black or dark-blue appearance because of the low-reflection optical design for a high current Colored solar panels, realized by depositing various reflection layers or structures, are emerging as power sources for building with visual aesthetics. However, these panels suffer from reduced photocurrent generation due to the less efficient light harvesting from visible light reflection and degraded power conversion efficiency (PCE). Here, color-patterned silicon heterojunction solar cells are achieved by incorporating luminescent quantum dots (QDs) with high quantum yields as light converters to realize an asthenic appearance with high PCE. It is found that large bandgap (blue) QD layers can convert UV light into visible light, which can notably alleviate the parasitic absorption by the front indium tin oxide and doped amorphous silicon. Additionally, a universal optical path model is proposed to understand the light transmission process, which is suitable for luminescent down-shift devices. In this study, solar cells with a PCE exceeding 23.5% are achieved using the combination of a blue QD layer and a top low refractive index antireflection layer. Based on our best knoledge,the obtained PCE is the highest for a color-patterned solar cell. The results suggest an enhanced strategy involving incorporation of luminescent QDs with an optical path design for high-performance photovoltaic panels with visual aesthetics.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202208042.
Electroluminescence (EL) efficiency of perovskite light-emitting diodes (PeLEDs) based on a few square millimeters has improved significantly in recent years. Nevertheless, the EL efficiency of PeLEDs would plunge once the active area is enlarged from a millimeter to even a subcentimeter due to the unsmooth energy transfer process among the edge region with numerous nonradiative recombination centers. Herein, an intriguing strategy is developed to realize high-quality quasi-2D perovskite thin film via tuning perovskite precursor rheological properties as well as modulating the substrate surface tension. The perovskite crystallization process is retarded by incorporating a strong chelating ligand into its precursor. Hydroxylamine-O-sulfonic acid, containing a sulfonic acid group and an amino group, acts as a strong chelating agent with lead ions (Pb 2+ ), which exhibit great synergistic potential in defect passivation and crystallization modulation. As a result, a large-area (25 cm 2 ) quasi-2D PeLED achieves an external quantum efficiency of 20.7% with uniform emitting characteristics, a record value among analogous same-size PeLEDs. The work may pave the way to realize high-performance large-area perovskite optoelectronic devices.
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