Teaser: Building quantum network with roomtemperature atomic and all-optical memories for scalable quantum information processing.Quantum memory capable of storage and retrieval of flying photons on demand is crucial for developing quantum information technologies. However, the devices needed for long-distance links are quite different from those envisioned for local processing. Here, we present the first hybrid quantum memory enabled network by demonstrating the interconnection and simultaneous operation of two types of quantum memory: an atomic-ensemble-based memory and an all-optical loop memory. The former generates and stores single atomic excitations that can then be converted to single photons; and the latter maps incoming photons in and out on demand, at room-temperature and with a broad acceptance bandwidth. Interfacing these two types of quantum memories, we observe a well-preserved quantum cross-correlation, reaching a value of 22, and a violation of the Cauchy-Schwarz inequality up to 549 standard deviations. Furthermore, we demonstrate the creation and storage of a fully operable heralded photon chain state that can achieve memory-built-in combining, swapping, splitting, tuning and chopping single photons in a chain temporally. Such a quantum network allows atomic excitations to be generated, stored, and converted to broadband photons, which are then transferred to the next node, stored, and faithfully retrieved, all at high speed and in a programmable fashion.
Recently, ceramic composites with low dielectric constant, low loss tangent, high flexural strength and high thermal shock resistance have received a considerable attention as candidate materials for certain high speed radome. In this paper, Si3N4-BN ceramic composites were fabricated by dry-press processing and cold isostatic pressing, with α-Si3N4 and BN as starting powder, Al2O3 and Yb2O3 as sintering additives, PMMA as pore-forming agenSubscript textt. After sintering for 2 h at 1750°C, porous Si3N4-BN ceramic composites with a three-point bending strength of 50~120MPa and a dielectric constant of 3.2~4.4 at 7~18 GHz frequency were obtained. The sintered body was mainly β-Si3N4 grains; BN was dispersed in the grains. The formation of β-Si3N4 grains was demonstrated by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) respectively. Furthermore, the influence of the BN content on the dielectric and mechanical properties was also studied. The porous Si3N4-BN ceramic composites showed a lower dielectric constant and shrinkage. For above excellent properties, Si3N4-BN ceramic composites have been became one of the most hopeful candidate materials for high speed radome.
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