The evolution operator method is applied to studying the time-dependent and spin-related electron transport through a magnetic quantum dot coupled to two normal-metal leads. When the microwave field is applied on quantum dot there are additional peaks of PAT current besides the main peak of resonant tunneling current, and the energy distance between peaks relate to the frequency of microwave fields. Furthermore, owe to the spin non-degeneration in the magnetic quantum dot, the spin-up and spin-down current peaks are separated, and the separated distance depends on Zeeman energy. These effects allow us to propose a scheme to control the magnitude and spin polarization of current.
The evolution operator approach is applied to studying photon-electron pumping effects on a quantum dot connected to two magnetic leads in the presence of both via-dot and over-dot tunneling channels. It is found that a microwave field applied to the quantum dot may give rise to charge and spin pumping at zero bias voltage for asymmetric magnetic junctions.
Photon-electron pumping effects on a quantum dot connected to two magnetic leads in the presence of both via-dot and over-dot tunneling channels have been investigated by the evolution operator approach. It is found that a time-variant field applied to the quantum dot may give rise to charge and spin pumping at zero bias voltage for asymmetric magnetic junctions. When the magnetic field switch on,the spin-up and spin-down current can be considerably separated,then the highly spin polarized current is also generated.
The evolution operator approach is applied to studying photon-electron pumping effects on a quantum dot connected to two magnetic leads in the presence of both via-dot and over-dot tunneling channels. It is found that a microwave field applied to the quantum dot may give rise to charge and spin pumping at zero bias voltage for asymmetric magnetic junctions.
The influences of a thin InGaAs layer grown on GaAs(100) substrate before deposited InAs self-assembled quantum dots(SAQDs) were experimentally investigated. Scanning electronic microscope (SEM) measurements show that the InGaAs strained layer may release the strain between wetting layer and QDs, and then enlarge size of QDs. When the thickness of InAs layer is small, the QDs are chained. Temperature dependent photoluminescence (TDPL) measurements show that the PL peaks of InAs QDs with In0.1Ga0.9As show much more red shift compared with the QDs directly deposited on GaAs matrix, and PL integral intensity enhances as T rises from 50K to 90K. We attribute this enhancement to the small potential barrier between WL and QDs produced by the InGaAs stained layer.
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