With forming-free, self-rectifying, and self-compliant properties, memristors can effectively prevent themselves from experiencing leakage currents and overshoot voltages without any additional circuitry. However, the implementation of all these features in a single memristor remains a challenge. Herein, a multifunctional Si 3 N 4 -based memristor with a structure of Ag/a-SiN x /p ++ -Si has been fabricated, and it was demonstrated, for the first time, that the device exhibits novel analog resistance switching behaviors, such as being forming-free, self-rectifying, and self-compliant, presenting well a coexistence of volatile and nonvolatile performance of resistance switching. The multifunctional analog resistance switching could be attributed to the formation of the Si-dangling bond channel and the migration of Ag + ions inside the a-SiN x layer. Our current results might provide an insightful understanding of the resistance switching mechanism of Si 3 N 4 -based memristors, and the device with a large on/off ratio (>10 3 ) and robust retention (>10 3 s) and endurance (>10 3 cycles) shows potential for application in crossbar synaptic array devices.
A dual-band balanced to unbalanced power divider with independent power division ratios (PDRs) at two operating frequencies is proposed in this paper. The proposed power divider includes a dual-band phase inverter, a grounded resistor, and four transmission-line sections (TLS). By simultaneously changing characteristic impedances and electrical lengths of the four TLS, the independent PDRs are obtained, and the large-signal output port at lower and upper operation bands can be different. Compared to the previous works, it has more flexibility in the power division. Moreover, the closed-form design equations are provided and discussed. To verify the proposed structure, two BTU power dividers operating at 1.0 and 2.0 GHz are designed, fabricated, and measured. The PDRs of the first power divider are-6 and 6 dB for the lower and upper operation bands, respectively. The second power divider has the PDRs of 3 and-6 dB. The measured results are good agreements with the theoretical calculation and electromagnetic simulation. INDEX TERMS Balanced to unbalanced, dual-band, independent power division ratios, power divider.
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