In this paper we propose an effective method to model quantum dot superlattice silicon tandem solar cell. The Schrödinger equation is solved through finite difference method (FDM) to calculate energy band of three-dimensional silicon quantum dots embedded in the matrix of SiO2 and Si3N4.We simulate the quantum dot superlattice as regularly spaced array of equally sized cubic dots in respective matrix. For simplicity, we consider only one period of the structure in calculation. From the result, the effects of matrix material, dot size and inter-dot distance on the bandgap are obtained.
In this paper, we analyze the bridge legs in which the largest deformation can be observed by conducting simulation via ANSYS tools and determine the membrane layer structure, which consists of one 0.1μm thick VOX thermal sensing layer and 7 other layers with thickness ratio 0.1μmSi3N4/0.3μmSiO2/0.1μmSi3N4/0.05μmNiCr/0.1μmSi3N4/0.3μmSiO2/0.1μmSi3N4. The stable and transient thermal simulation analysis of the microbridge is performed. From the stable thermal analysis of temperature field profile, the highest and lowest temperatures and the temperature heterogeneity of the bridge deck are 300.526K, 300.468K and 0.058K respectively. The thermal time constant 6.0ms is acquired from the transient thermal analysis, which can reach the requirement of 60fps frame rate. Moreover the joule heating effect is then examined, which has influence on temperature rise of bridge deck with 3V voltage applied between two legs. The highest temperature of bridge deck is 300.354K which is lower than 300.526K caused by thermal radiation. At last, the force simulation analysis of microbridge is performed, which is based on the forementioned thermal analysis, the largest deformation is 46.45nm, the largest equivalent stress is 2.503GPa.
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