K-shell photoionization (PI) of Li, Be[Formula: see text] and B[Formula: see text] from ground state [Formula: see text] have been studied by using the [Formula: see text]-matrix method with pseudostates. The K-shell PI process is featured with the contributions from the core-excited metastable states or dominated by the Auger states 2Po. The resonant parameters of the Auger states 2Po and the PI cross-sections have been calculated and compared with the available experimental and theoretical works. Our results agree very well with that of the published works. It is worth noting that compared with previous theoretical calculations, our results of B[Formula: see text] show better agreements with the latest high-resolution advanced light source measurements [A. Müller et al., J. Phys. B 43 (2010) 135602].
The effect of microstructure on transport properties of nano-polycrystalline La0.7Sr0.3MnO3-δ films, which were prepared by DC magnetron sputtering at various working pressures and followed by air annealing at 973K for 1h, has been investigated. The result indicates that the change of working pressure can change the microstructure, metal-insulator transition temperature (TIM) and peak resistance but does not change the transport mechanism for the films. The vacancy defects have an important effect on the transport properties of the films. Higher working pressure tends to decrease the density of vacancy defects. Low vacancy defects account for the high TIM and low resistance of the films. In the region of T > TIM, the charge carriers are moving in variable range hopping mode. The behavior of resistance decreasing with the increasing of temperature at low temperature (T<23K) can be explained on the basis of thermal excitation tunneling effect. The minimum resistance results from the combined effect of the tunneling effect and intrinsic metallic transport characteristic of the films.
The degradation of ZnO/Silicone coating system under 90keV proton irradiation varying from 5×1014cm-2 to 1×1016cm-2, was studied by slow positron annihilation spectrum. Effective diffusion length calculated by Variable energy positron fit (VEPFIT) shows a dramatically break in a dose of 1×1015cm-2. It is ascribed to the increase of crosslink density and decrease of free volume and hole during the proton irradiation. Furthermore, positron has shown a satisfying sensitivity in detecting the nano-scale defect on ZnO/Silicone system.
Tantalum nitride (TaN) thin films were deposited using magnetron sputtering method under different N2/Ar ratio condition. Slow positron beam was used to analyze the microstructure of those films. The results show that the films which deposited at low N2/Ar flow ratio contain more vacancy-like defects, and the corresponding S parameter is relatively large. The sheet resistance measurement displays that ohms-per-square greatly increase with increased N2/Ar ratio. And the reasons could be related to nonstoichiometry-induced vacancies and lattice distortions.
Positron annihilation lifetime spectroscopy (PALS) and coincident Doppler-broadening spectroscopy (CDBS) have been used for investigating the evolution of vacancy-type defects in the thermoelectric material Cu2Te which annealed at different temperatures. The results of PALS show that a fraction of positrons has got annihilated at the surfaces and the sample which annealed at 450 °C has the highest concentration of surface defects. The average positron lifetime and the S parameter have the same trends which gradually increase with the increase of the annealing temperature. This change implies that the total concentration of the defects has been changed with the change of the annealed temperatures. The results of the CDBS ratio spectrum and S-W plot indicate that the defect species have no change after annealing at different temperatures.
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