Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point [1,2]. However, accessing the physics of the low density region at the Dirac point has been difficult because of the presence of disorder which leaves the graphene with local microscopic electron and hole puddles [3][4][5], resulting in a finite density of carriers even at the charge neutrality point. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult [6,7].Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance [8]. In this letter, we use scanning tunneling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moiré patterns in the topographic images. However, contrary to recent predictions [9,10], this conformation does not lead to a sizable band gap due to the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron-hole charge fluctuations are reduced by two orders of magnitude as compared to those on silicon oxide. This leads to charge fluctuations which are as small as in suspended graphene [6], opening up Dirac point physics to more diverse experiments than are possible on freestanding devices.

The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of bandgaps near points of the reciprocal lattice known as Brillouin zone boundaries 1 . However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a bandgap and instead new Dirac points appear in the electronic structure of the material 2,3 . Graphene on hexagonal boron nitride exhibits a rotation-dependent moiré pattern 4,5 . Here, we show experimentally and theoretically that this moiré pattern acts as a weak periodic potential and thereby leads to the emergence of a new set of Dirac points at an energy determined by its wavelength. The new massless Dirac fermions generated at these superlattice Dirac points are characterized by a significantly reduced Fermi velocity. Furthermore, the local density of states near these Dirac cones exhibits hexagonal modulation due to the influence of the periodic potential.Owing to its hexagonal lattice structure with a diatomic unit cell, graphene has low-energy electronic properties that are governed by the massless Dirac equation 6 . This has a number of consequences, among them Klein tunnelling [7][8][9][10] , which prevents electrostatic confinement of charge carriers and inhibits the fabrication of standard semiconductor devices. This has motivated a number of recent theoretical investigations of graphene in periodic potentials 2,3,[11][12][13][14][15] , which explored ways of controlling the propagation of charge carriers by means of various superlattice potentials. On the analytical side, one-dimensional potentials render particle propagation anisotropic 2,3,11,14 and generate new Dirac points, where the electron and hole bands meet, at energies ±hv F |G|/2 given by the reciprocal superlattice vectors G (refs 2,3), where v F is the Fermi velocity. Numerical approaches have extended several of these results to the case of two-dimensional potentials 2,3,14,15 . Unlike for Schrödinger fermions, the periodic potentials generally induce new Dirac points but do not open bandgaps in graphene, owing to the chiral nature of the Dirac fermions.Recent scanning tunnelling microscope (STM) topography experiments have reported well-developed moiré patterns in graphene on crystalline substrates, which suggests that the latter generate effective periodic potentials 4,5,16,17 . Of particular interest is hexagonal boron nitride (hBN), because it is an insulator which only couples weakly to graphene. Furthermore, graphene on hBN exhibits the highest mobility ever reported for graphene on any substrate 18 , and has strongly suppressed charge inhomogeneities 4,5 . Hexagonal boron nitride is a layered material whose planes have the same atomic structure as graphene, with a 1.8% longer lattice constant. The influence of the weak graphene-substrate interlayer coupling on the electronic transport and spectroscopic properties of graphene is not well understood. In particular, there ...

We study the anisotropic electronic properties of two-dimensional (2D) SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscopy and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. The 2D SnS field-effect transistors with a cross-Hall-bar structure are fabricated. They show heavily hole-doped (∼10 cm) conductivity with strong in-plane anisotropy. At room temperature, the mobility along the zigzag direction exceeds 20 cm V s, which can be up to 1.7 times that in the armchair direction. This strong anisotropy is then explained by the effective mass ratio along the two directions and agrees well with previous theoretical predictions. Temperature-dependent carrier density determined the acceptor energy level to be ∼45 meV above the valence band maximum. This value matches a calculated defect level of 42 meV for Sn vacancies, indicating that Sn deficiency is the main cause of the p-type conductivity.

Abstract:Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a non-linear carrier density dependence, and bears signatures of electron-electron interactions. The data allow a direct measurement of the electric field-induced bandgap at zero magnetic field, the orbital Landau level (LLs) energies, and the broken symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all halffilled LLs, as well as emerging phases at filling factors ν = 0 and ν = ±2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs.

Abstract:We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

A new layered oxide semiconductor (Bi2O2Se) is found with excellent electronic properties for promising applications.

Recently, VIB-group layered transition metal dichalcogenides (TMDs), MX 2 (M = Mo, W; X = S, Se, Te), attracted extensive attention due to rich physiochemical properties, ranging from catalysis, [1][2][3] topological states, [4][5][6][7][8][9][10][11][12][13][14][15][16] valley polarization, [17][18][19][20][21][22] even to superconductivity. [23][24][25][26][27][28] These multiple electronic properties essentially originate from varied crystal structures of TMD materials. The typical crystal structure in TMD materials is the 2H-type structure with [X-M-X] atoms in ABA stacking in each monolayer (Figure S1a, Supporting Information). Usually, 2H MX 2 materials are semiconducting, such as, 2H MoS 2 , where the valley polarization was widely studied. [17][18][19] Also, Ising superconductivity was observed when the TMD materials are reduced down to a few or even oneRecently the metastable 1T′-type VIB-group transition metal dichalcogenides (TMDs) have attracted extensive attention due to their rich and intriguing physical properties, including superconductivity, valleytronics physics, and topological physics. Here, a new layered WS 2 dubbed "2M" WS 2 , is constructed from 1T′ WS 2 monolayers, is synthesized. Its phase is defined as 2M based on the number of layers in each unit cell and the subordinate crystallographic system. Intrinsic superconductivity is observed in 2M WS 2 with a transition temperature T c of 8.8 K, which is the highest among TMDs not subject to any fine-tuning process. Furthermore, the electronic structure of 2M WS 2 is found by Shubnikov-de Haas oscillations and first-principles calculations to have a strong anisotropy. In addition, topological surface states with a single Dirac cone, protected by topological invariant Z 2 , are predicted through first-principles calculations. These findings reveal that the new 2M WS 2 might be an interesting topological superconductor candidate from the VIB-group transition metal dichalcogenides.

Using different types of WSe2 and graphene-based heterostructures, we experimentally determine the offset between the graphene neutrality point and the WSe2 conduction and valence band edges, as well as the WSe2 dielectric constant along the c-axis. In a first heterostructure, consisting of WSe2-on-graphene, we use the WSe2 layer as the top dielectric in dual-gated graphene field-effect transistors to determine the WSe2 capacitance as a function of thickness, and the WSe2 dielectric constant along the c-axis. In a second heterostructure consisting of graphene-on-WSe2, the lateral electron transport shows ambipolar behavior characteristic of graphene combined with a conductivity saturation at sufficiently high positive (negative) gate bias, associated with carrier population of the conduction (valence) band in WSe2. By combining the experimental results from both heterostructures, we determine the band offset between the graphene charge neutrality point, and the WSe2 conduction and valence band edges.