The Cu 2 ZnSnS 4 (CZTS) film was successfully prepared and the Raman peaks at 251, 288, 335 and 368 cm −1 were observed. The light absorption coefficient of CZTS film is higher than 10 4 cm −1 and the energy bandgap is estimated to be about 1.5 eV. The photo-current response under different electrical field was studied for CZTS film. Persistent photoconductivity effect was observed and the decay time of current was studied under different electrical fields. The decay time of current decreased from 218 s to 0.2646 s with the electrical field reducing from 1 V to 1 × 10 −4 V, respectively.
Zn/Sn/Cu (CZT) stacks were prepared by RF magnetron sputtering. The stacks were pretreated at different temperatures (200 °C, 300 °C, 350 °C, and 400 °C) for 0.5 h and then followed by sulfurization at 500 °C for 2 h. Then, the structures, morphologies, and optical properties of the as-obtained Cu2ZnSnS4 (CZTS) films were studied by x-ray diffraction (XRD), Raman spectroscopy, UV–Vis–NIR, scanning electron microscope (SEM), and energy-dispersive x-ray spectroscopy (EDX). The XRD and Raman spectroscopy results indicated that the sample pretreated at 350 °C had no secondary phase and good crystallization. At the same time, SEM confirmed that it had large and dense grains. According to the UV–Vis–NIR spectrum, the sample had an absorption coefficient larger than 104 cm−1 in the visible light range and a band gap close to 1.5 eV.
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