Abstract-In the Internet today, traffic engineering is performed assuming that the offered traffic is inelastic. In reality, end hosts adapt their sending rates to network congestion, and network operators adapt the routing to the measured traffic. This raises the question of whether the joint system of congestion control (transport layer) and routing (network layer) is stable and optimal. Using the established optimization model for TCP and that for traffic engineering as a basis, we find the joint system is stable and typically maximizes aggregate user utility, especially under more homogeneous link capacities. We prove that both stability and optimality of the joint system can be guaranteed for sufficiently elastic traffic simply by tuning the cost function used for traffic engineering. Then, we present a new algorithm that adapts on a faster timescale to changes in traffic distribution and is more robust to large traffic bursts. Uniting the network and transport layers in a multi-layer approach, this algorithm, Distributed Adaptive Traffic Engineering (DATE), jointly optimizes the goals of end users and network operators and reacts quickly to avoid bottlenecks. Simulations demonstrate that DATE converges quickly.

While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural quantum dots at a 28 Si/SiO2 interface. Mobile electrons have short T1 and T2 of 0.3 µs at 5 K. In line with predictions, confining electrons and cooling increases T1 to 0.8 ms at 350 mK. In contrast, T2 for quantum dots is around 10 µs at 350 mK, increasing to 30 µs when the dot density is reduced by a factor of two. The quantum dot T2 is shorter than T1, indicating that T2 is not controlled by T1 at 350 mK but is instead limited by an extrinsic mechanism. The evidence suggests that this extrinsic mechanism is an exchange interaction between electrons in neighboring dots.

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.

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