In situ high-pressure angle dispersive x-ray diffraction experiments using synchrotron radiation on inverse spinel structure Zn2SnO4 nanowires were carried out with a diamond anvil cell at room temperature. The crystal symmetry becomes lower at around 12.9 GPa and an intermediate phase with an orthorhombic structure occurs. At about 32.7 GPa, a phase transition occurs accompanying a high-pressure phase. In situ Raman scattering investigation was also performed to explore the phase transition. In the pressure range 15.5–32.8 GPa, the intermediate phase is also detected and a high-pressure phase is observed above 32.8 GPa. The high-pressure phase is considered to possess the ambient pressure structure of CaFe2O4.

ZnO nanoporous belts with a smooth surface and high pore density have been successfully synthesized; the simple growth method is applicable to produce high-yield single-crystalline ZnO nanoporous belts with a relatively high purity and at a low cost. The morphology and microstructure and optical properties of ZnO nanoporous belts were analyzed by X-ray diffraction (XRD), Fourier transform infrared system (FTIR), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), selective area electron diffraction (SAED), and photoluminescence (PL) spectroscopy. Results reveal that ZnO nanoporous belts possess good crystalline quality. The formation mechanism of the special ZnO microstructure is discussed, emphasizing the effect of polar orientation on the nucleation and growth of ZnO nanoporous belts.

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β-Ga 2 O 3 nanorods were successfully fabricated through annealing Ga2O3/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline Ga 2 O 3 with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-Ga 2 O 3 single crystal. The growth process of the β-Ga 2 O 3 nanorods is probably dominated by conventional vapor-solid mechanism.

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