Paleo-ground ruptures, fissures, liquefaction and geomorphic features in the Xilinhot district, Inner Mongolia, northern China, are documented and seismic intensity for the meizoseismal areas and magnitudes of paleoearthquakes are estimated. Trenching investigations revealed a huge paleoseismic ground rupture and fissure zone with a width of more than 200 m. Field investigations and interpretation of remote sensing images demonstrate that active faults related to paleoearthquakes appear to be about 200 km long. Geologic and geomorphic evidences indicate that one large earthquake with a magnitude of about 7.5 at about 13 ka BP or multiple paleoseismic events of M ≥ 6.0 have occurred in the studied area since 53 ka BP. One of the paleo-meizoseismal areas is determined to be near Xilinhot. Seismic intensity in Modified Mercalli scale (MM) is estimated to be larger than VI in the vicinity of the study area and at least VIII in the epicentral region. This is consistent with seismic activities in and around the Xilinhot district in recent years, but higher than anything yet reported. The results provide important data for design engineering and regional planning in order to resist damage from potentially large earthquakes in the future.
The study of the effect of γ-rays on the characteristic parameters of the AlGaN ultraviolet focal plane arrays (UVFPA) was carried out to address the problem of degradation of the characteristic parameters of the solar-blind UVFPA after irradiated by energetic particles
in the space environment. The AlGaN UVFPA was irradiated with 60Co γ-rays and annealed at room temperature after irradiation. The dark current, noise voltage, responsivity, detectivity, and other characteristics of the UVFPA were compared before and after irradiation
and annealing to summarize the changes of the UVFPA characteristics and to analyze the radiation effect mechanism of AlGaN UVFPA. The experimental results show that as irradiation dose increases, the dark current increases, and the responsivity decreases. After annealing of irradiated sample
at room temperature, the degradation of the characteristic parameters caused by irradiation is restored. We believe that the effect of ionizing radiation leads to the increase of leakage current in MOS transistor and threshold voltage drift, resulting in the change of the UVFPA operating point
and degradation of the characteristic parameters.
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