Background Atopic dermatitis (AD) is a chronic, pruritic, immune‐mediated inflammatory disease. Developments in basic science and clinical research have increased our understanding of AD. Although pain as a symptom of AD is underemphasized in previous studies, multiple researchers address pain as a frequent burden of AD. However, the exact role of pain in AD is not fully understood. Aims Our review aimed to summarize the current evidence focusing on characteristics, mechanism, and management of pain in AD. Materials & Methods We conducted a thorough literature review in the PubMed database to figure out different aspects discussing pain in AD, including pain symptoms, burden, the relationship between pain and itch, mechanism, and pain management in AD. Results and Conclusion AD patients affected by skin pain vary from 42.7%‐92.2% with remarkable intensity and heavy burden. Skin pain and itch interacted both in symptoms and mechanisms. Atopic skin with the impaired barrier, neurogenic inflammation mediators, peripheral and central sensitization of pain may possibly explain pain mechanism in AD. Future research is needed to clarify the commonality and disparity of pain and itch in AD in order to seek efficacious medications and treatment.
of device junctions such as metal oxide semiconductor (MOS) p-and n-channel, tunneling p-or n-junction, and Schottky junction, etc., can be crafted and fabricated separately. In the post-silicon era, newgeneration van der Waals materials such as two-dimensional (2D) semiconductors have received extensive attention and research due to their practical advantages of smooth surface, [1,2] high mobility, [3] ultrathin, [4] flexibility, [5,6] in-plane structural and optical anisotropy, [7][8][9][10] thickness-dependent carrier conduction, [11] thickness tunable bandgap, [12,13] and abundance of direct band-edge excitons. [14,15] Among them, transition metal dichalcogenides (TMDs), including four popular members, MoS 2 , MoSe 2 , WS 2 , and WSe 2 , have been vigorously studied and have potential capabilities in practical semiconductor device applications such as field-effect transistors, [16] bipolar junction transistors, [17,18] phototransistors, [19] and light-emitting diodes (LEDs), [20] etc., due to their high environmental stability and the flexibility on thickness tuning bandgaps. The growth of p-and n-type materials in TMDs layers may be a key issue for the development of various p-n junction devices in 2D semiconductor technology. However, to date, the synthesis of p-type layered TMDs is still challenging, and even some proposals have been made related to Nbdoped p-MoSe 2 , [21] Nb-doped p-MoS 2 , [22] oxygen plasma doped p-MoS 2 , [23] and nitrogen-induced p-WS 2 , [24] etc., the information on the ideal dopants for forming p-type TMDs with controllable carrier concentration and good stability is still insufficient and needs to be further explored. Nowadays, many TMD bipolar p-n junction devices and LEDs typically operate in gate-controlled p-and n-type with a lateral junction, [20,25,26] and a large number of vertically stacked 2D layered devices are still fabricated as heterostructures and heterojunctions [17,18] because of the lack of van der Waals stacked p-n homojunction.Compared to conventional MoS 2 , MoSe 2 , WS 2 , and WSe 2 dichalcogenides, rhenium diselenide (ReSe 2 ) is also an important member of the TMD-family 2D semiconductors, which crystallizes in a specific distorted CdI 2 -type layered structure of triclinic symmetry (space group P1). [27,28] Dissimilar to that the MoS 2 group has a uniform and isotropic layer plane in generally two-layer hexagonal or three-layer rhombohedral form, the structural distortion in the CdI 2 -type (i.e., 1T′) ReSe 2 layer may cause by a specific d 3 nonbonding Re-Re interaction and which The formation of p-or n-type material via impurity doping should be crucial and essentially prior to the establishment of junction devices in semiconductor processing. Especially in a 2D transition-metal dichalcogenide (TMD), dopant selection for growing p-and n-type TMD semiconductors may suffer much higher difficulty and complexity than conventional Si and III-V compounds owing to the complicated valences occurred in transition metals. Different amount of chromium doped in ReSe ...
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