The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO 3 and SrTiO 3 , provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm 2 V -1 s -1 (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO 3 and a spinel g-Al 2 O 3 epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite twodimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

Planar borophene, the truly 2D monolayer boron, has been independently successfully grown on Ag(1 1 1) by two groups (2016 Nat. Chem. 8 563 and 2015 Science 350 1513), which has received widespreading attentions. The superconducting property has not been unambiguously observed, which is unexpected because light element boron should have strong electron-phonon coupling. To resolve this puzzle, we show that the superconducting transition temperature T c of β 12 borophene is effectively suppressed by the substrate-induced tensile strain and electron doping via first principles calculations. The biaxial tensile strain of 2% induced by Ag(1 1 1) significantly reduces T c from 14 K to 2.95 K; electron doping of 0.1 eper boron atom further shrinks T c to 0.09 K. We also predict that the superconducting transition temperature in β 12 can be enhanced to 22.82 K with proper compressive strain (−1%) and 18.97 K with hole doping (0.1 h + per boron). Further studies indicate that the variation of T c is closely related to the density of states of σ bands near the Fermi surface. Our results help to explain the challenges to experimentally probe superconductivity in substratesupported borophene.

Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to two-dimensional (2D) limit. In this study, we utilize scanning tunneling microscopy/spectroscopy to investigate monolayer 1T-NbSe2 to elucidate the energy of the Mott upper Hubbard band (UHB), and reveal that the spin-polarized UHB is spatially distributed away from the dz2 orbital at the center of the CDW unit. Moreover, the UHB shows a √3 × √3 R30° periodicity in addition to the typically observed CDW pattern. Furthermore, a pattern similar to the CDW order is visible deep in the Mott gap, exhibiting CDW without contribution of the Mott Hubbard band. Based on these findings in monolayer 1T-NbSe2, we provide novel insights into the relation between the correlated and collective electronic structures in monolayer 2D systems.

Intrinsic valley polarization can be obtained in VSe monolayers with broken inversion symmetry and time reversal symmetry. First-principles investigations reveal that the magnitude of the valley splitting in magnetic VSe induced by spin-orbit coupling reaches as high as 78.2 meV and can be linearly tuned by biaxial strain. Besides conventional polarized light, hole doping or illumination with light of proper frequency can offer effective routes to realize valley polarization. Moreover, spin-orbit coupling in monolayer VSe breaks not only the valley degeneracy but also the three-fold rotational symmetry in band structure. The intrinsic and tunable valley splitting and the breaking of optical isotropy bring additional benefits to valleytronic and optoelectronic applications.

Electrostatic gating field and light illumination are two widely used stimuli for semiconductor devices. Via capacitive effect, a gate field modifies the carrier density of the devices, while illumination generates extra carriers by exciting trapped electrons. Here we report an unusual illumination-enhanced gating effect in a two-dimensional electron gas at the LaAlO 3 /SrTiO 3 interface, which has been the focus of emergent phenomena exploration. We find that light illumination decreases, rather than increases, the carrier density of the gas when the interface is negatively gated through the SrTiO 3 layer, and the density drop can be 20 times as large as that caused by the conventional capacitive effect. This effect is further found to stem from an illumination-accelerated interface polarization, an originally extremely slow process. This unusual effect provides a promising controlling of the correlated oxide electronics in which a much larger gating capacity is demanding due to their intrinsic larger carrier density.

Two-dimensional topological materials have attracted intense research efforts owing to their promise in applications for low-energy, high-efficiency quantum computations. Group-VA elemental thin films with strong spin−orbit coupling have been predicted to host topologically nontrivial states as excellent two-dimensional topological materials. Herein, we experimentally demonstrated for the first time that the epitaxially grown high-quality antimonene monolayer islands with buckled configurations exhibit significantly robust one-dimensional topological edge states above the Fermi level. We further demonstrated that these topologically nontrivial edge states arise from a single p-orbital manifold as a general consequence of atomic spin−orbit coupling. Thus, our findings establish monolayer antimonene as a new class of topological monolayer materials hosting the topological edge states for future low-power electronic nanodevices and quantum computations.

Single-layer transition-metal dichalcogenides (TMDs) such as MoS and MoSe exhibit unique electronic band structures ideal for hosting many exotic spin-orbital orderings. It has been widely accepted that Rashba spin splitting (RSS) is linearly proportional to the external field in heterostructure interfaces or to the potential gradient in polar materials. Surprisingly, an extraordinary nonlinear dependence of RSS is found in semiconducting TMD monolayers under a gate field. In contrast to small and constant RSS in polar materials, the potential gradient in non-polar TMDs gradually increases with the gate bias, resulting in nonlinear RSS with a Rashba coefficient an order-of-magnitude larger than the linear one. Most strikingly, under a large gate field MoSe demonstrates the largest anisotropic spin splitting among all known semiconductors to our knowledge. Based on the k·p model via symmetry analysis, we identify that the third-order contributions are responsible for the large nonlinear Rashba splitting. The gate tunable spin splitting found in semiconducting pristine TMD monolayers promises future spintronics applications in that spin polarized electrons can be generated by external gating in an experimentally accessible way.

The van der Waals (vdW) heterostructures have rich functions and intriguing physical properties, which has attracted wide attention. Effective control of excitons in vdW heterostructures is still urgent for fundamental research and realistic applications. Here, we successfully achieved quantitative tuning of the intralayer exciton of monolayers and observed the transition from intralayer excitons to interlayer excitons in WS 2 / MoSe 2 heterostructures, via hydrostatic pressure. The energy of interlayer excitons is in a "locked" or "superstable" state, which is not sensitive to pressure. The first-principles calculation reveals the stronger interlayer interaction which leads to enhanced interlayer exciton behavior in WS 2 / MoSe 2 heterostructures under external pressure and reveals the robust peak of interlayer excitons. This work provides an effective strategy to study the interlayer interaction in vdW heterostructures and reveals the enhanced interlayer excitons in WS 2 /MoSe 2 , which could be of great importance for the material and device design in various similar quantum systems.