Control of electronic states is a central issue in electrocatalysis, as it determines the charge transfer behavior for better catalytic reaction efficiency. While a variety of chemical modifications thus have...

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We elucidate that the peculiar segregation behavior of indium have a critical contribution to achieving unprecedented dielectric properties for a new class of high-reliability ceramic capacitors.

Correction for ‘Unveiling of interstice-occupying dopant segregation at grain boundaries in perovskite oxide dielectrics for a new class of ceramic capacitors’ by Ji-Sang An et al., Energy Environ. Sci., 2023, https://doi.org/10.1039/d2ee03152c.

Since two major criteria for melting were proposed by Lindemann and Born in the early 1900s, many simulations and observations have been carried out to elucidate the premelting phenomena largely at the crystal surfaces and grain boundaries below the bulk melting point. Although dislocations and clusters of vacancies and interstitials were predicted as possible origins to trigger the melting, experimental direct observations demonstrating the correlation of premelting with lattice defects inside a crystal remain elusive. Using atomic-column-resolved imaging with scanning transmission electron microscopy in polycrystalline BaCeO3, here we clarify the initiation of melting at two-dimensional faults inside the crystals below the melting temperature. In particular, melting in a layer-by-layer manner rather than random nucleation at the early stage was identified as a notable finding. Emphasizing the value of direct atomistic observation, our study suggests that lattice defects inside crystals should not be overlooked as preferential nucleation sites for phase transformation including melting.