The plastic deformation of crystalline and non-crystalline solids incorporates microscopically localized deformation modes that can be precursors to shear localization. Shear localization has been found to be an important and sometimes dominant deformation and fracture mode in metals, fractured and granular ceramics, polymers, and metallic glasses at high strains and strain rates. Experiments involving the collapse of a thick walled cylinder enable controlled and reproducible application of plastic deformation at very high strain rates to specimens. These experiments were supplemented by hat-shaped specimens tested in a compression Hopkinson bar. The initiation and propagation of shear bands has been studied in metals (Ti, Ta, Ti-6Al-4V, and stainless steel), granular and prefractured ceramics (Al 2 O 3 and SiC), a polymer (teflon) and a metallic glass (Co 58 Ni 10 Fe 5 Si 11 B 16 ). The first aspect that was investigated is the microstructural evolution inside the shear bands. A fine recrystallized structure is observed in Ti, Cu, Al-Li, and Ta, and it is becoming clear that a recrystallization mechanism is operating. The fast deformation and short cooling times inhibit grain-boundary migration; it is shown, for the first time, that a rotational mechanism, presented in terms of dislocation energetics and grain-boundary reorientation, can operate within the time of the deformation process. In pre-fractured and granular ceramics, a process of comminution takes place when the particles are greater than a critical size a c . When they are smaller than a c , particle deformation takes place. For the granular SiC, a novel mechanism of shear-induced bonding was experimentally identified inside the shear bands. For all materials, shear bands exhibit a clear self-organization, with a characteristic spacing that is a function of a number of parameters. This self-organization is analyzed in terms of fundamental material parameters in the frame of Grady-Kipp (momentum diffusion), Wright-Ockendon, and Molinari (perturbation) models.

Two commercial hot-pressed boron carbide ceramics were investigated by transmission electron microscopy. Atomic-scale observations suggest that the grain boundaries of the two materials are free of grain-boundary films. Two triple-junction phases were found and characterized to be rhombohedral Fe 2 B 103 and orthorhombic Ti 3 B 4 . In addition, intra-granular precipitates, AlN, Mo 2 (C, B) and graphite, were identified and found to have coherent relationships with the boron carbide matrix. Micron-scale inclusions were also observed and most of them were determined to be graphite. The formation mechanisms of the secondary phases and their possible influence on mechanical properties are also discussed. II. Experimental ProcedureTwo commercial hot-pressed B 4 C samples, nominally E and F, were used in the present study. The general properties of the two 1935 J ournal

Solid-state shock-wave propagation is strongly nonequilibrium in nature and hence rate dependent. Using high-power pulsed-laserdriven shock compression, unprecedented high strain rates can be achieved; here we report the directional amorphization in boron carbide polycrystals. At a shock pressure of 45∼50 GPa, multiple planar faults, slightly deviated from maximum shear direction, occur a few hundred nanometers below the shock surface. High-resolution transmission electron microscopy reveals that these planar faults are precursors of directional amorphization. It is proposed that the shear stresses cause the amorphization and that pressure assists the process by ensuring the integrity of the specimen. Thermal energy conversion calculations including heat transfer suggest that amorphization is a solid-state process. Such a phenomenon has significant effect on the ballistic performance of B 4 C.oron carbide is one of the hardest materials on earth while extremely lightweight, making it excellent for ballistic protection applications such as body armor (1-6). Thus, its dynamic behavior under impact/shock loading has been the subject of intensive studies for decades (1,(5)(6)(7)(8)(9)(10)(11)(12)(13). It is known that boron carbide undergoes an abrupt shear strength drop at a critical shock pressure around 20∼23 GPa, suggesting a deteriorated penetration resistance (8). Based on similar observations in geological materials (5), Grady (7) hypothesized that this was caused by localized softening mechanisms such as shear localization and/or melting. Examining fragments collected from a ballistic test using transmission electron microscopy (TEM), Chen et al. (14) were the first to identify localized amorphization in boron carbide, which appeared to be aligned to certain crystallographic planes. However, because the loading history of these fragments is unknown, its effect on the observed microstructure is not understood. Additionally, although the more well-defined loading conditions associated with quasi-static diamond-anvil cell (15) and nanoindentation (16, 17) experiments have provided greater insight into amorphization of boron carbide, they do not address the regime of high strain rate.The laser shock experimental technique offers promise in bridging the gaps of the previous experiments by enabling boron carbide to be shock compressed under controlled and prescribed uniaxial strain loading conditions and then recovered for postshock characterization by TEM. To ensure the integrity of the specimen, the duration of the stress pulse should be smaller than the characteristic time for crack propagation which is typically on the microsecond scale [limited by Rayleigh wave speed (18)]. Traditional dynamic loading methods such as plate impact and split Hopkinson bar cannot deliver the strain rates required because the stress pulses of both techniques occur on microsecond time scales. Therefore, brittle solids such as B 4 C will fail catastrophically by crack nucleation, propagation, and coalescence (19). To solve this ch...

The well-documented formation of amorphous bands in boron carbide (B 4 C) under contact loading has been identified in the literature as one of the possible mechanisms for its catastrophic failure. To mitigate amorphization, Si-doping was suggested by an earlier computational work, which was further substantiated by an experimental study. However, there have been discrepancies between theoretical and experimental studies, about Si replacing atom/s in B 12 icosahedra or the C-B-C chain. Dense single phase Si-doped boron carbide is produced through a conventional scalable route. A powder mixture of SiB 6 , B 4 C, and amorphous boron is reactively sintered, yielding a dense Si-doped boron carbide material.A combined analysis of Rietveld refinement on XRD pattern coupled with electron density difference Fourier maps and DFT simulations were performed in order to investigate the location of Si atoms in boron carbide lattice. Si atoms occupy an interstitial position, between the icosahedra and the chain. These Si atoms are bonded to the chain end C atoms and result in a kinked chain. Additionally, these Si atoms are also bonded to the neighboring equatorial M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT2 B atom of the icosahedra, which is already bonded to the C atom of the chain, forming a bridge like geometry. Si atoms are found to reside around the chain, resulting in a kinked chain. These Si atoms lie close to boron atom of the neighboring icosahedra. Owing to this bonding, distance suggests weak bonding and Si is anticipated to stabilize the icosahedra through electron donation, which is expected to help in mitigating stress-induced amorphization. Possible supercell structures are suggested along with the most plausible structure for Si-doped boron carbide.

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