We report the active matrix micro-LEDs (AMLEDs) with high brightness over 40,000 cd/m 2 . Active-matrix low temperature poly-Si TFT with mobility over 150 cm 2 /Vs by using blue laser annealing is used for AMLEDs. A 256 pixels micro-LED with ~ 40,000 cd/m 2 at the driving current of 10 mA is fabricated and then 1,024 pixels micro-LED is demonstrated using Au bonding on the LTPS TFT backplane.
A new backlight for LCD has been requested as the size of LCD grows larger. In this paper, it is reported that a flat panel light source (FPLS) showing high luminance of up to 5,600cd/m 2 was developed. Luminance of the FPLS varies as a function of gas mixture ratio. High power inverter was separately designed and tested to drive large size LCD FPLS backlights.
This paper presents the efficiency variations of flat fluorescent lamp (FFL) according to the inverter waveforms such as sinusoidal and pulse waveforms. Test results show that the efficiency of the 32″ FF: backlight system improved by 5% with the inverter with pulse wave operation compared to operation with sinusoidal waveform.
Abstract— Organic light‐emitting diodes (OLEDs) having multiple organic layers were fabricated to analyze the physical phenomena occurring in an OLED according to the amplitude of the applied voltage. The staircase voltage with both an increasing period and a constant period was designed and applied to an OLED. The displacement current began to change at a voltage where the conduction current began to change, and partly originated from the formation of space charge due to the low mobility of the majority carrier. The displacement current was shown to be constant at low voltage and decreased after showing a maximum value as the applied voltage increased. The exact voltage for the injection of two types of carriers and light emission could be obtained from the variation in the displacement current.
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