Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 1019 to below 1016 cm−3, as the distance from the interface region increases from 1 to 300 μm. These concentrations are the same as the total acceptor densities determined in Hall experiments. The depth profile of O is similar to that of VGa, suggesting that the Ga vacancies are complexed with the oxygen impurities.

A co-operative study was conducted to determine the clinical characteristics of patients with moyamoya disease who were diagnosed and treated at neurosurgical institutes in Korea before 1995. Twenty-six hospitals contributed 505 cases and among them, the clinical characteristics of 334 patients with definite moyamoya disease were evaluated. The number of patients began to increase from the late 1980s, and after that approximately 20 patients were treated each year. There were two age peaks: from six to 15 and from 31 to 40 years of age. Haemorrhagic manifestations occurred in approximately 43% of the patients. The major clinical manifestations were haemorrhage in adults (62.4%) and ischaemia in children (61.2%). Overall 54.5% of the patients experienced decreased consciousness levels, mainly due to intracranial haemorrhage or cerebral infarction. In the patients with ischemic manifestations, the adult patients were more likely to have cerebral infarction than the pediatric patients (80% vs. 39%) and the pediatric patients were more likely to have TIA (61% vs. 25%). Thirty eight percent of the patients underwent bypass surgery and 53% of these procedures were performed bilaterally. Treatment policies, including indications for bypass surgery and commonly used drugs, were somewhat different according to the institution. Overall favorable outcome was 73%, and the most significant factor affecting poor outcome was haemorrhagic manifestation. This article describes the characteristics of 334 patients with moyamoya disease, who were diagnosed and treated at neurosurgical institutes in Korea before 1995.

The cerebellum is involved in the learning and retention of motor skills. Using animal and human models, a number of studies have shown that long-term motor skill training induces structural and functional plasticity in the cerebellum. The aim of this study was to investigate whether macroscopic alteration in the volume of cerebellum occurs in basketball players who had learned complex motor skills and practiced them intensively for a long time. Three-dimensional magnetic resonance imaging volumetry was performed in basketball players (n = 19) and healthy controls (n = 20), and the volumes of cerebellum and vermian lobules were compared between two groups. Although there was no macroscopic plasticity detected in the cerebellum as a whole, detailed parcellation of cerebellum revealed morphological enlargement in the vermian lobules VI-VII (declive, folium, and tuber) of basketball players (P < 0.0166), which might then be interpreted as evidence for plasticity. This finding suggests that the extensive practice and performance of sports-related motor skills activate structural plasticity of vermian lobules in human cerebellum and suggests that vermian VI-VII plays an important role in motor learning.

High-resolution, variable-temperature photoluminescence studies of recombination processes associated with excitons bound to donors in hydride-vapor-phase epitaxial GaN are presented. Detailed analyses of the two-electron satellite ͑2ES͒ region identify transitions associated with ground and excited states of both the donor-bound exciton complexes and of the donor itself. All of the 2ES transitions observed in this work can be accounted for by the recombination of excitons bound to Si and O substitutional impurities and the line positions are in excellent agreement with the energies of donor intraimpurity transitions measured previously by infrared absorption. Conflicting aspects of donor identification and the binding energies of impurities and excitons are clarified.

The effect of crystal polarity on the electrical properties of Ti/Al contacts to n-GaN substrate has been investigated. The Ti/Al contacts prepared on Ga-face n-GaN substrate became ohmic with a contact resistivity of 2×10−5 Ω cm2 after annealing at temperatures higher than 600 °C for 30 s. On the contrary, the contacts on N-face n-GaN substrate exhibited nonlinear current–voltage curve and high Schottky barrier heights over 1 eV were measured at the same annealing conditions. These results could be explained by opposite piezoelectric-field at GaN/AlN heterostructure resulted from different polarity of the GaN substrate.