BaNb 2 P 2 O 11 and Ba 3 Nb 2 P 4 O 18 compounds with corner-sharing NbO 6 octahedra and PO 4 tetrahedra were prepared by a conventional solid-state reaction method. The crystal structure and microstructure were investigated by Xray powder diffraction and field emission scanning electron microscope, respectively. The microwave dielectric properties were measured using a network analyzer. Both ceramics were sintered at a relatively low temperature of 1150°C and had a relative density of ∼96%. Compared to Ba 3 Nb 2 P 4 O 18 , BaNb 2 P 2 O 11 had a higher permittivity of 31.7. However, the quality factor of BaNb 2 P 2 O 11 , was smaller than Ba 3 Nb 2 P 4 O 18 . Furthermore, the effect of the crystal structure on the microwave dielectric properties was investigated.
Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron
co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room
temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure
was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / (
RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied
0~100W respectively. The thicknesses of the films were 350~650nm. The composition
concentrations of the each film were measured with EPMA and AES. The low resistivity of 1-2 × 10-3
and an average transmittance above 80% in the visible range were attained for the films over a range
of δ (0.3 ≤ δ ≤ 0.5). The films also showed a high chemical stability with time and a good uniformity.
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