Transcranial focused ultrasound (FUS) is a noninvasive treatment for brain tumors and neuromodulation. Based on normal incidence, conventional FUS techniques use a focused or an array of ultrasonic transducers to overcome the attenuation and absorption of ultrasound in the skull; however, this remains the main limitation of using FUS. A dual-mode conversion technique based on Lamb waves is proposed to achieve high transmission efficiency. This concept was validated using the finite element analysis (FEA) and experiments based on changes in the incident angle. Aluminum, plexiglass, and a human skull were used as materials with different attenuations. The transmission loss was calculated for each material, and the results were compared with the reflectance function of the Lamb waves. Oblique incidence based on dual-mode conversion exhibited a better transmission efficiency than that of a normal incidence for all of the specimens. The total transmission losses for the materials were 13.7, 15.46, and 3.91 dB less than those associated with the normal incidence. A wedge transducer was designed and fabricated to implement the proposed method. The results demonstrated the potential applicability of the dual-mode conversion technique for the human skull.

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A theoretical simulation study of the dispersion characteristic of the surface acoustic wave (Rayleigh wave) was conducted by modeling the adhesion interlayer with stiffness coefficients to evaluate the bonding properties of nano-scale thin film structures. For experimental validation, a set of thin film specimens were fabricated—637 nm, 628 nm, 637 nm, 600 nm, and 600 nm thick titanium (Ti) films were deposited on silicon (Si) (100) substrate using a DC Magnetron sputtering process with DC power from 28.8 W, 57.6 W, 86.4 W, 115.2 W, and 144 W. The thicknesses of the Ti films were measured using a scanning electron microscope (SEM). Surface acoustic wave velocity for each of the manufactured thin film specimens was measured by using a V(z) curve technique of a Scanning Acoustic Microscope. The measured velocity, transducer frequency, and thickness of the film were applied to dispersion characteristic simulation for a given stiffness coefficient to calculate adhesion strength of each specimen. To verify the simulation result, the adhesion force of each specimen was measured using a nano-scratch test and then compared with the calculated values from the dispersion characteristic simulation. The value of adhesion strength from the dispersion characteristic simulation and the value of adhesion force of the nano-scratch test were found to have a similar tendency according to the process variable of the thin film. The results demonstrated that the adhesion strength of a thin film could be evaluated quantitatively by calculating the dispersion characteristics with the adhesion interlayer stiffness model.

In this study, TiN thin films fabricated based on the substrate temperature process parameters of a DC magnetron sputtering device and their characteristics are analyzed. TiN thin films are deposited on Si wafer (100) substrates by setting the substrate temperatures to ambient temperature, 100, 200, and 300 °C. The residual stress measurement using the XRD method, adhesion characteristic analysis performed using a nanoscratch test to measure the critical load of the nanoindentation device, and leaky surface acoustic wave (LSAW) measurement were conducted using the V(z) technique of the ultrasonic microscope; the correlations between each measurement were analyzed. The residual stress of the TiN thin film was relieved by up to approximately 48% and adhesion properties enhanced by approximately 10% with an increase in the substrate temperature. In addition, the velocity of the LSAW presented a tendency to increase by up to approximately 5%. The residual stress and velocity of the LSAW were found to be inversely proportional, while the critical load and velocity of the LSAW were directly proportional.

In this study, an ultra-high-resolution acoustic microscopy system capable of non-destructively evaluating defects that may occur in thin film structures was fabricated. It is an integrated system of the control module, activation module, and data acquisition system, in which an integrated control software for controlling each module was developed. The control module includes the mechanical, control, and ultrasonic parts. The activation module was composed of the pulser/receiver, and the data acquisition system included an A/D board. In addition, the integrated control software performs system operation and material measurement and includes an analysis program to analyze the obtained A-Scan signals in various ways. A through-silicon via (TSV) device, which is a semiconductor structure, was prepared to verify the performance of the developed system. The TSV device was analyzed using an ultra-high-resolution acoustic microscope. When the C-Scan images were analyzed, void defects with a size of 20 μm were detected at a depth of approximately 32.5 μm. A similar result could be confirmed when the cross section was measured using focused ion beam (FIB) microscopy.