A reliable in situ interferometry technique allowed accurate prediction of the change in ZnO morphology during growth on various substrate types. Interferometry results showed that a 40-nm-thick nucleation layer on top of GaN allows growth of smooth and monocrystalline ZnO layers, as also confirmed by x-ray diffractometry (XRD). Studies of ZnO growth on silicon indicated that the surface morphology changes during the high-temperature growth step, resulting in needle-shaped ZnO on top of a thin ZnO initial layer. The observed surface morphology change corresponded to the interferometer signature and allowed identification of nanostructure formation.
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