Well-aligned nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have nanoscale apexes (∼1 nm) with high aspect ratios (∼50), which were achieved by simultaneous SiC nanomask formation and dry etching during ECR plasma process. This technique was applied to a variety of substrates such as silicon, polycrystalline silicon, gallium nitride, gallium phosphide, sapphire, and aluminum, indicating its general applicability. High-resolution transmission electron microscopy and Auger depth profile analyses revealed that the SiC cap, with Si:C ratio of 1:1, exhibited 3C−SiC and 2H−SiC structure on Si and GaP, respectively, with heteroepitaxial relationship. This one-step self-masked dry etching technique enables the fabrication of uniform nanotip arrays on various substrates over large area at low process temperatures, thereby demonstrating a high potential for practical industrial application.

This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 μm. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and 579 cm−1, which are attributed to the A1(transverse optical), E2, and A1(longitudinal optical) phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV.

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should be given to applying a probabilistic approach, "to quantitatively estimate the effect of the dimensional variability on the performance of mechanical elements and to keep this variability within allowable limits." Discussion is also provided on confidence limits in collecting such data as parts dimensions. Whether it was the author's intent to save the best for last or not, Chapter 15 manifests itself as one of the most useful of the whole book. Entitled "Random Loads and Responses in Some Engineering Systems," material is presented for several "platforms" such as cars, ships, aircraft, and earthquakes. Each is addressed in its own section showing typical loading and response profiles. Equations are presented in a general format facilitating direct application, by professional engineers, for specific cases. Also, this chapter appears to be an excellent summary of most concepts discussed in the previous chapters. In concluding, two general remarks can be made. First, the book has been organized such that it serves as an excellent handbook/reference type of tool in addition to being a very good text (perhaps graduate level). Second, the use of many, many examples, in every chapter, strengthens the effectiveness of this work, especially, as previously mentioned, in Chapter 15 where the material is presented for specific moving "platforms." This book is highly recommended for the engineer's library.