A Monte Carlo simulation is used to solve the ion-implantation process with three-dimensional boundaries. The projected range, standard deviation, skewness, kurtosis, and damage distributions after ion implanation for TiSi2 heterostructures and the feasibility of the silicide doping process are simulated in this work.
The fabrication of a shallow n + p junction by diffusing arsenic atoms from the As +-implanted TiSi 2 into the underlying silicon has been developed. The amendment of the radiation damage and the activation of impurities can be fulfilled in one annealing process in conjunction with the dopant drive-in. The junction depth below the TiSi 2 /Si interface is about 0.11 ,um, and is insensitive to the values of implanted ion energy and the annealing condition as long as the dopants remain in the TiSi 2 film. The dopant concentration near the surface in the n + region can be added up to 2X W 19 /cm 3 for an implanted dose of 5 X 1OIs/cm2.
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