Metal-oxide-semiconductor (MOS) photodetector with the high-k material enhanced deep depletion at edge was demonstrated. The mechanism of saturated substrate injection current in MOS capacitor was adopted. By building HfO2 based devices that with the direct observation of the enhanced edge charge collection efficiency due to fringing field effect in inversion, we are able to show a photodetector with 3000 times (ratio of photocurrent to dark current) improvement in sensitivity than the conventional SiO2 based tunneling photodiodes (approximate 100 times) in the visible.
Articles you may be interested inBreakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams AIP Conf. Proc. 1525, 654 (2013); 10.1063/1.4802408 Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures J. Appl. Phys. 98, 024506 (2005); 10.1063/1.1985976 Characterization of ultrathin metal-oxide-semiconductor structures using coupled current and capacitance-voltage models based on quantum calculation J. Appl. Phys. 92, 4449 (2002); 10.1063/1.1506000 Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon-nitride/SiO 2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology Appl. Phys. Lett. 79, 3488 (2001); 10.1063/1.1420586Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devicesThe deep depletion behaviors at the structure of Si/ SiO 2 with various equivalent oxide thicknesses ͑EOTs͒ are comprehensively studied by magnified capacitance versus gate voltage ͑C-V͒ curves of metal-oxide-semiconductor ͑P-substrate͒ capacitors in this work. According to the correlation between inversion tunneling current and deep depletion, it was found that the initiation voltage of deep depletion phenomenon increases with EOT ͑2.8-3.1 nm͒. After the constant voltage stress, the early occurrence of initiation voltage of deep depletion is observed after oxide breakdown. In addition, the uniform area ratio concept is proposed for the electrical characterization of deep depletion via local depletion capacitance model. It was novel for the evaluation of interfacial property between dielectric and Si substrate.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.