A generalised instantaneous non-active power theory is presented. Comprehensive definitions of instantaneous active and non-active currents, as well as instantaneous, average and apparent powers, are proposed. These definitions have flexible forms that are applicable to different power systems, such as single-phase or multi-phase, periodic or non-periodic and balanced or unbalanced systems. By changing the averaging interval and the reference voltage, various non-active power theories can be derived from this theory. The definitions of instantaneous active and nonactive currents provide an algorithm for a STATCOM to calculate the non-active current in the load current. The theory is implemented by the STATCOM, and four cases (three-phase balanced RL load, three-phase unbalanced RL load, diode rectifier load and single-phase load) are tested. The experimental results show that the STATCOM can perform instantaneous non-active power compensation, and both the fundamental non-active component and the harmonics are eliminated from the utility so that nearly unity power factor can be achieved. The STATCOM also has a fast dynamic response for transients.
This report outlines a methodology for reading back different electrical charges, from Non Volatile Memory (NVM) based Flash devices. The charge is stored in the floating gates (FGs) of the transistors. Reading back these charges in the form of logic levels of “1 bit (1b)” and “0 bit (0b)” without deleting the information from the device was the goal. Scanning Capacitance Microscopy (SCM) with ∼50-100 nm spatial resolution was used, to directly probe the charge on Floating Gate Transistor (FGT) channels. Transistor charge values (ON/OFF or “1b/0b”) are measured. Both the sample preparation and SCM probing methods are discussed. The application has been demonstrated with SanDisk based 64 MB NAND Flash memory device.
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