Time-resolved carrier dynamics in single-wall carbon nanotubes is investigated by means of two-color pump-probe experiments. The recombination dynamics is monitored by probing the transient photobleaching observed on the interband transitions of the semiconducting tubes. This dynamics takes place on a 1 ps time scale which is 1 order of magnitude slower than in graphite. Transient photoinduced absorption is observed for nonresonant probing and is interpreted as a global redshift of the pi-plasmon resonance. We show that the opening of the band gap in semiconducting carbon nanotubes determines the nonlinear response dynamics over the whole visible and near-infrared spectrum.

ABSTRACT. The performance of hybrid organic perovskite (HOP) for solar energy conversion is driving a renewed interest in their light emitting properties. The recent observation of broad visible emission in layered HOP highlights their potential as white light emitters. Improvement of the efficiency of the material requires a better understanding of its photophysical properties. We present in-depth experimental investigations of white light (WL) emission in thin films of the (C6H11NH3)PbBr4. The broadband, strongly Stokes shifted emission presents a maximum at 90K when excited at 3.815 eV, and below this temperature coexists with an excitonic edge emission.X-rays and calorimetry measurements excludes the existence of a phase transition as an origin of the thermal behavior of the WL luminescence. The free excitonic emission quenches at low temperature, despite a binding energy estimated to 280 meV. Time-Resolved Photoluminescence spectroscopy reveals the multicomponent nature of the broad emission. We analyzed the dependence of these components as function of temperature and excitation energy. The results are consistent with the existence of self-trapped states. The quenching of the free exciton and the thermal evolution of the WL luminescence decay time are explained by the existence of an energy barrier against self-trapping, estimated to ~10 meV.