There is strong interest in new forms of transparent, flexible or wearable electronics
using non-Si materials deposited at low temperature on cheap substrates. While Si-based thin film
transistors (TFTs) are widely used in displays, there are some drawbacks such as light sensitivity
and light degradation and low field effect mobility (<1 cm2/Vs). For example, virtually all liquid
crystal displays (LCDs) use TFTs imbedded in the panel itself. One of the promising alternatives to
use of Si TFTs involves amorphous or nanocrystalline n-type oxide semiconductors. For example,
there have been promising results with zinc oxide, indium gallium oxide and zinc tin oxide
channels. In this paper, recent progress in these new materials for TFTs is reviewed. It is expected
that GaInZnO transistor arrays will be used for driving laminar electroluminescent, organic lightemitting
diode (OLED) and LCD displays. These transistors may potentially operate at up to an
order of magnitude faster than Si FTFs.
This study investigates GaAs dry etching in capacitively coupled BCl 3 /N 2 plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from 100~200 W on the electrodes and a N 2 composition ranging from 0~100 % in BCl
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