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The development of new materials, having exceptional properties in comparison to existing materials is highly required for bringing advancement in electronic and optoelectronic technologies. Keeping this fact, we investigated structural, electronic, and optical properties of zincblende GaN doped with selected Zn concentrations (6.25%, 12.50%, and 18.70%), using the first-principle calculations based on density functional theory with GGA + U. We conducted the entire study using the WIEN2K code. In this study, we calculated various significant parametric quantities such as cohesive energies, formation energies, bulk moduli, and lattice constants along with the study of optical and electronic properties by substituting Ga atoms with Zn atoms in 1 × 2 × 2 supercell. The structural stability is confirmed by studying the phonon dispersion curves which suggest that Zn:GaN material is stable against the 6.25% and 18.70% Zn concentrations while for 12.50%, it shows instability. The Hubbard values U = 0, 2, 4, 6 eV were added to GGA and the electronic properties were improved with the U = 6 eV. Optical absorption was blue shifted while the refractive index and dielectric constant were increased with increasing the Zn concentrations. Electronic properties are enhanced due to the prime contribution of cations (Zn) 3d states. The optical and electronic properties are further discussed in detail in the entire study.

An infrared-absorption band centered at 0.85 eV, which is below the big optical absorption at the charge-density-wave (CDW) gap energy of 1.85 eV, has been observed for semiconducting single crystalline Ba(1-x)KxBiO3. With substituting K for Ba, the spectral weight of the new band increases with x, while that of the CDW-gap excitation decreases. Since the impurity state with the K substitution is known to be nonmagnetic at low temperatures, Bi3+ the state with 6s2 electrons surrounded by the six Bi5+ ions forms a small bipolaron by losing a pair of electrons in the Rice-Sneddon model. The new band is assigned to a transition from the lower-Peierls band to a state of the bipolaronic point defect.

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Electric and magnetic properties of multiferroic GdMn 2 O 5 in external magnetic fields were investigated to map out the magnetoelectric phases in this material. Due to strong magnetoelectric coupling, the dielectric permittivity is highly sensitive to phase boundaries in GdMn 2 O 5 , which allowed to construct the field-temperature phase diagrams. Several phase transitions are observed which are strongly field-dependent with respect to field orientation and strength. The phase diagram for a magnetic field along the crystallographic a-axis corresponds well to a polarization step, as induced by 90 • rotation of Gd magnetic moments. Our results support the model of two ferroelectric sublattices, Mn-Mn and Gd-Mn with strong R-Mn (4f -3d) interaction for the polarization in RMn 2 O 5 .

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