Atomic force microscopy (AFM) is an essential nanoinstrument technique for several applications such as cell biology and nanoelectronics metrology and inspection. The need for statistically significant sample sizes means that data collection can be an extremely lengthy process in AFM. The use of a single AFM instrument is known for its very low speed and not being suitable for scanning large areas, resulting in a very-low-throughput measurement. We address this challenge by parallelizing AFM instruments. The parallelization is achieved by miniaturizing the AFM instrument and operating many of them simultaneously. This instrument has the advantages that each miniaturized AFM can be operated independently and that the advances in the field of AFM, both in terms of speed and imaging modalities, can be implemented more easily. Moreover, a parallel AFM instrument also allows one to measure several physical parameters simultaneously; while one instrument measures nano-scale topography, another instrument can measure mechanical, electrical, or thermal properties, making it a lab-on-an-instrument. In this paper, a proof of principle of such a parallel AFM instrument has been demonstrated by analyzing the topography of large samples such as semiconductor wafers. This nanoinstrument provides new research opportunities in the nanometrology of wafers and nanolithography masks by enabling real die-to-die and wafer-level measurements and in cell biology by measuring the nano-scale properties of a large number of cells.
We have developed a high speed, miniature scanning probe microscope (MSPM) integrated with a Positioning Unit (PU) for accurately positioning the MSPM on a large substrate. This combination enables simultaneous, parallel operation of many units on a large sample for high throughput measurements. The size of the MSPM is 19 × 45 × 70 mm(3). It contains a one-dimensional flexure stage with counter-balanced actuation for vertical scanning with a bandwidth of 50 kHz and a z-travel range of more than 2 μm. This stage is mechanically decoupled from the rest of the MSPM by suspending it on specific dynamically determined points. The motion of the probe, which is mounted on top of the flexure stage is measured by a very compact optical beam deflection (OBD). Thermal noise spectrum measurements of short cantilevers show a bandwidth of 2 MHz and a noise of less than 15 fm/Hz(1/2). A fast approach and engagement of the probe to the substrate surface have been achieved by integrating a small stepper actuator and direct monitoring of the cantilever response to the approaching surface. The PU has the same width as the MSPM, 45 mm and can position the MSPM to a pre-chosen position within an area of 275×30 mm(2) to within 100 nm accuracy within a few seconds. During scanning, the MSPM is detached from the PU which is essential to eliminate mechanical vibration and drift from the relatively low-resonance frequency and low-stiffness structure of the PU. Although the specific implementation of the MSPM we describe here has been developed as an atomic force microscope, the general architecture is applicable to any form of SPM. This high speed MSPM is now being used in a parallel SPM architecture for inspection and metrology of large samples such as semiconductor wafers and masks.
With the device dimensions moving towards the 1X node, the semiconductor industry is rapidly approaching the point where 10 nm defects become critical. Therefore, new methods for improving the yield are emerging, including inspection and review methods with sufficient resolution and throughput. Existing industrial tools cannot anymore fulfill these requirements for upcoming smaller and 3D features, since they are performing at the edge of their performance. Scanning probe microscopy (SPM) has the ability to accurately measure dimensions in the micrometer to nanometer scale. Examples of applications are surface roughness, channel height and width measurement, defect inspection in wafers, masks and flat panel displays. In most of these applications, the target area is very large, and, therefore, the throughput of the measurement plays an important role in the final production cost. Single SPM has never been able to compete with other inspection systems in terms of measurement speed, thus has not fulfilled the industry needs in throughput and cost. Further increase of the speed of the single SPM helps, but it still is far from the required throughput and, therefore, insufficient for high-volume manufacturing. Over the past three years, we have developed a revolutionary concept for a multiple miniaturized SPM heads system, which can inspect and measure many sites in parallel. The very high speed of each miniaturized SPM unit allow the user to scan many areas, each with the size of tens of micrometers, in a few seconds. This paper presents an overview of the technical developments and experimental results of the parallel SPM system for wafer and mask inspection.
With the device dimensions moving towards the 1X node and below, the semiconductor industry is rapidly approaching the point where existing metrology, inspection and review tools face huge challenges in terms of resolution, the ability to resolve 3D and the throughput. Due to the advantages of sub-nanometer resolution and the ability of true 3D scanning, scanning probe microscope (SPM) and specifically atomic force microscope (AFM) are considered as alternative technologies for CD-metrology, defect inspection and review of 1X node and below. In order to meet the increasing demand for resolution and throughput of CD-metrology, defect inspection and review, TNO has previously introduced the parallel SPM concept, consisting of parallel operation of many miniaturized SPMs on a 300 and 450 mm wafer. In this paper we will present the proof of principle of the parallelization for metrology and inspection. To give an indication of the system's specifications, the throughput of scanning is 4500 sites per hour, each within an area of 1 µm 2 and 1024 ×1024 pixels.
Scanning probe microscopy (SPM) is a promising candidate for accurate assessment of metrology and defects on wafers and masks, however it has traditionally been too slow for high-throughput applications, although recent developments have significantly pushed the speed of SPM [1,2]. In this paper we present new results obtained with our previously presented high-throughput parallel SPM system [3,4] that showcase two key advances that are required for a successful deployment of SPM in high-throughput metrology, defect and mask inspection. The first is a very fast (up to 40 lines/s) image acquisition and a comparison of the image quality as function of speed. Secondly, a fast approach method: measurements of the scan-head approaching the sample from 0.2 and 1.0 mm distance in under 1.4 and 6 seconds respectively.
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