Optimized single stripe 975-nm broad area devices deliver 76% power conversion efficiency at 10°C. Cooling the material leads to 85% efficiency at -50°C. External differential quantum efficiency is the dominant term.
Etching microstructures into broad area diode lasers is found to lead to more uniform near field and increased power conversion efficiency, arising from increased slope. Self-consistent device simulation indicates that this improvement is due to an increase in the effective internal injection efficiency above threshold-the nonuniform near field leads to regions of inefficient clamping of the carrier density in the laser stripe. Measurements of spontaneous emission through the substrate confirm the predicted carrier profile. Both experiment and theory show that improved overlap between carrier and power distributions correlates with improved slope.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.