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The understanding of the Ar/Cl 2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task, because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial RF discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, RF power, DC bias, Cl 2 concentration, diameter of the inner electrode, temperature of the outer cylinder and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

Plasma-based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. We have demonstrated surface layer removal in an asymmetric nonplanar geometry, using a simple cylindrical cavity. The etching rate is highly correlated with the shape of the inner electrode, radio-frequency (rf) circuit elements, gas pressure, rf power, chlorine concentration in the Cl 2 =Ar gas mixtures, residence time of reactive species, and temperature of the cavity. Using variable radius cylindrical electrodes, large-surface ring-shaped samples, and dc bias in the external circuit, we have measured substantial average etching rates and outlined the possibility of optimizing plasma properties with respect to maximum surface processing effect.

The reduction of the asymmetry in the plasma sheath voltages of a cylindrical coaxial capacitively coupled plasma is crucial for efficient surface modification of the inner surfaces of concave three-dimensional structures, including superconducting radio frequency cavities. One critical asymmetry effect is the negative dc self-bias, formed across the inner electrode plasma sheath due to its lower surface area compared to the outer electrode. The effect on the self-bias potential with the surface enhancement by geometric modification on the inner electrode structure is studied. The shapes of the inner electrodes are chosen as cylindrical tube, large and small pitch bellows, and disc-loaded corrugated structure (DLCS). The dc self-bias measurements for all these shapes were taken at different process parameters in Ar/Cl2 discharge. The reversal of the negative dc self-bias potential to become positive for a DLCS inner electrode was observed and the best etch rate is achieved due to the reduction in plasma asymmetry.