Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution X-ray diffraction techniques together with statistical analysis of AFM images in order to determine the impact of In concentration and threading dislocations density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the threading dislocation density with a screw component in the substrate Pure edge threading dislocations do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.