One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO 2 grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.
Thermally grown silica is one of the most desirable materials for the realization of optical waveguides and whispering-gallery mode micro-resonators due to the ultra-low propagation loss and broad transparency window from UV to mid-IR. Here, we present the design, fabrication, and characterization of a high-Q ring-resonator device with a monolithically integrated evanescent rib waveguide coupler made solely from silica thermally grown on a Si substrate. The device delivered an intrinsic Q-factor of 3.7 × 10 6 and operated close to the critical coupling regime for both TE and TM polarizations. The achieved Q-factors were more than three orders of magnitude higher than those of comparable silica resonator devices. Furthermore, we showcase the ultra-low parasitic fluorescence unique to thermally grown silica and compare it to a device fabricated in Si 3 N 4 .
We report unprecedentedly low second harmonic band propagation losses in highly nonlinear AlGaAs-on-insulator waveguides pumped in the telecom L-band. These rafindings pave the way towards pa metric nonlinearities at single photon-level.
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