AgBiSe has recently been shown to exhibit promising thermoelectric properties due to the low intrinsic thermal conductivity, stemming from a large degree of lattice anharmonicity. While samples synthesized via solid-state routes usually exhibit n-type behavior, p-type transport is seen in samples based on solution synthetic routes possibly due to Ag vacancies. Using a combined approach of synchrotron diffraction, thermoelectric transport measurements and thermal transport modeling, we show the influence of synthetically induced Ag vacancies on the structure of AgBiSe and the thermoelectric transport. We identify the degree of anti-site disorder of Ag and Bi due to the occurring phase transformation and the influence of the vacancy content on metal ordering. Additionally, we show that anti-site disorder and vacancies act as scattering centers for phonons, leading to enhanced point defect scattering in this interesting thermoelectric material.

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Owing to their intrinsically low thermal conductivity and chemical diversity, materials within the I−V−VI 2 family, and especially AgBiSe 2 , have recently attracted interest as promising thermoelectric materials. However, further investigations are needed in order to develop a more fundamental understanding of the origin of the low thermal conductivity in AgBiSe 2 , to evaluate possible stereochemical activity of the 6s 2 lone pair of Bi 3+ , and to further elaborate on chemical design approaches for influencing the occurring phase transitions. In this work, a combination of temperature-dependent X-ray diffraction, Rietveld refinements of laboratory X-ray diffraction data, and pair distribution function analyses of synchrotron X-ray diffraction data is used to tackle the influence of Sb substitution within AgBi 1−x Sb x Se 2 (0 ⩽ x ⩽ 0.15) on the phase transitions, local distortions, and offcentering of the structure. This work shows that, similar to other lone-pair-containing materials, local off-centering and distortions can be found in AgBiSe 2 . Furthermore, electronic and thermal transport measurements, in combination with the modeling of point-defect scattering, highlight the importance of structural characterizations toward understanding changes induced by elemental substitutions. This work provides new insights into the structure−transport correlations of the thermoelectric AgBiSe 2 .

Background The exact epidemiology of tick-borne encephalitis virus (TBEV) infections is unknown because many TBEV infections have an influenza-like or asymptomatic course. Surveillance data are based on patients with any (predominantly neurological) symptoms that prompted diagnostic testing. Infection- and vaccine-induced antibodies against TBEV can be distinguished using an NS1 IgG ELISA. Aim In a seroprevalence study we aimed to investigate TBEV antibody prevalence, incidences, manifestation indices and potential protection rates in a highly endemic district in south-western Germany. Methods We analysed 2,220 samples from healthy blood donors collected between May and September 2021. The reported number of TBEV infections was provided on a sub-district level by the local public health authorities. Blood samples were first screened using a TBEV IgG ELISA. In a second step, all positive samples were further analysed with a recently established NS1 IgG ELISA. The presence of specific antibodies against TBEV (excluding cross-reacting antibodies against other flaviviruses) was confirmed by testing screening-positive samples with a microneutralisation assay. Results Of 2,220 included samples, 1,257 (57%) tested positive by TBEV IgG ELISA and 125 tested positive for infection-induced TBEV NS1 antibodies, resulting in a TBEV NS1 IgG seroprevalence at 5.6% in our population. The yearly incidence based on the NS1 ELISA findings resulted in 283 cases per 100,000 inhabitants. Conclusion Using the TBEV NS1 IgG assay, we confirmed a manifestation index of ca 2% and a high incidence of predominantly silent TBEV infections (> 250/100,000/year), which exceeds the incidence of notified cases (4.7/100,000/year) considerably.