In recent years Hybrid Metrology has emerged as an option for enhancing the performance of existing measurement toolsets and is currently implemented in production 1 . Hybrid Metrology is the practice to combine measurements from multiple toolset types in order to enable or improve the measurement of one or more critical parameters. While all applications tried before were improved through standard (sequential) hybridization of data from one toolset to another, advances in device architecture, materials and processes made possible to find one case that demanded a much deeper understanding of the physical basis of measurements and simultaneous optimization of data. This paper presents the first such work using the concept of co-optimization based hybridization, where image analysis parameters of CD-SEM (critical dimensions Scanning Electron Microscope) are modulated by profile information from OCD (optical critical dimension -scatterometry) while the OCD extracted profile is concurrently optimized through addition of the CD-SEM CD results. Test vehicle utilized in this work is the 14nm technology node based FinFET High-k/Interfacial layer structure.
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