Se was diffused into Si doped with various concentrations of the group-III elements B, Ga, Al, or In. Selenium acting as a double donor in silicon is found to pair with all the acceptors from the group-III examined, and the Se-acceptor pairs give rise to a donor level at Ec−0.2 eV. An additional donor level at Ec−0.3 eV is assigned to the first ionization level of selenium in silicon. Solubility of Se in silicon in the temperature range 850–1300 °C has been established through Hall-effect measurements. The diffusion coefficient measurements between 800 and 1250 °C yielded 2.47 exp(−2.84 eV/kT) cm2/sec for the diffusion coefficient of Se, DSe.
Two -dimensional x -y addressed mosaic arrays of more than 12,000 lead-sulfide detectors each (64 by 192 detectors in an active area slightly larger than 6.4 by 19 mm) have been successfully developed and demonstrated at Aerojet ElectroSystems Company. This paper describes the pulse -bias modulation concept used to operate the detectors and multiplex their outputs and the design and fabrication techniques used to implement this concept. The measured performance of an array which was independently verified by the Naval Ocean Systems Center in San Diego is described, and data for an additional 10 modules (a total of more than 105 detectors) are summarized.
Two -dimensional x -y addressed mosaic arrays consisting of more than 12,000 lead -sulfide detectors in a package measuring 1/4 x 3/4 inch have been successfully developed and tested by the Aerojet ElectroSystems Company. The pulse -bias modulation concept, design, fabrication methods, test techniques, and test results for individual modules (192 x 64 detectors) are presented.The successful assembly of four of the individual modules into a subassembly consisting of approximately 50,000 detectors is described. The requirements for testing to achieve a greater throughput rate are discussed.
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