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The development of biaxially textured, second-generation, high-temperature superconducting (HTS) wires is expected to enable most large-scale applications of HTS materials, in particular electric-power applications. For many potential applications, high critical currents in applied magnetic fields are required. It is well known that columnar defects generated by irradiating high-temperature superconducting materials with heavy ions significantly enhance the in-field critical current density. Hence, for over a decade scientists world-wide have sought means to produce such columnar defects in HTS materials without the expense and complexity of ionizing radiation. Using a simple and practically scalable technique, we have succeeded in producing long, nearly continuous vortex pins along the c-axis in YBa2Cu3O7−δ (YBCO), in the form of self-assembled stacks of BaZrO3 (BZO) nanodots and nanorods. The nanodots and nanorods have a diameter of ∼2–3 nm and an areal density (‘matching field’) of 8–10 T for 2 vol.% incorporation of BaZrO3. In addition, four misfit dislocations around each nanodot or nanorod are aligned and act as extended columnar defects. YBCO films with such defects exhibit significantly enhanced pinning with less sensitivity to magnetic fields H. In particular, at intermediate field values, the current density, Jc, varies as Jc∼H−α, with α∼0.3 rather than the usual values 0.5–0.65. Similar results were also obtained for CaZrO3 (CZO) and YSZ incorporation in the form of nanodots and nanorods within YBCO, indicating the broad applicability of the developed process. The process could also be used to incorporate self-assembled nanodots and nanorods within matrices of other materials for different applications, such as magnetic materials.

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We demonstrated short segments of a superconducting wire that meets or exceeds performance requirements for many large-scale applications of high-temperature superconducting materials, especially those requiring a high supercurrent and/or a high engineering critical current density in applied magnetic fields. The performance requirements for these varied applications were met in 3-micrometer-thick YBa2Cu3O(7-delta) films epitaxially grown via pulsed laser ablation on rolling assisted biaxially textured substrates. Enhancements of the critical current in self-field as well as excellent retention of this current in high applied magnetic fields were achieved in the thick films via incorporation of a periodic array of extended columnar defects, composed of self-aligned nanodots of nonsuperconducting material extending through the entire thickness of the film. These columnar defects are highly effective in pinning the superconducting vortices or flux lines, thereby resulting in the substantially enhanced performance of this wire.

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Cd 2 Os 2 O 7 crystallizes in the pyrochlore structure and undergoes a metal-insulator transition ͑MIT͒ near 226 K. We have characterized the MIT in Cd 2 Os 2 O 7 using x-ray diffraction, resistivity at ambient and high pressure, specific heat, magnetization, thermopower, Hall coefficient, and thermal conductivity. Both single crystals and polycrystalline material were examined. The MIT is accompanied by no change in crystal symmetry and a change in unit-cell volume of less than 0.05%. The resistivity shows little temperature dependence above 226 K, but increases by 3 orders of magnitude as the sample is cooled to 4 K. The specific heat anomaly resembles a mean-field transition and shows no hysteresis or latent heat. Cd 2 Os 2 O 7 orders magnetically at the MIT. The magnetization data are consistent with antiferromagnetic order, with a small parasitic ferromagnetic component. The Hall and Seebeck coefficients are consistent with a semiconducting gap opening at the Fermi energy at the MIT. We have also performed electronic structure calculations on Cd 2 Os 2 O 7. These calculations indicate that Cd 2 Os 2 O 7 is metallic, with a sharp peak in the density of states at the Fermi energy. We interpret the data in terms of a Slater transition. In this scenario, the MIT is produced by a doubling of the unit cell due to the establishment of antiferromagnetic order. A Slater transition-unlike a Mott transition-is predicted to be continuous, with a semiconducting energy gap opening much like a BCS gap as the material is cooled below T MIT .