The laser-induced crystallization behavior of GeTe-based amorphous alloy thin films has been quantitatively studied by local reflection measurements with a focused 780 nm laser. The use of multiple laser pulse sequences enables the nucleation rate and crystal-growth speed to be separately deduced, allowing the compositional variation of both these processes to be followed. This not only gives detailed information on the crystallization mechanism, but also allows the fine tuning of phase change alloy compositions for use in erasable optical recording. The differences between the as-deposited and melt-quenched amorphous phases are also discussed. In particular, it is shown that the crystallization speed of the as-deposited layer can differ by over an order of magnitude from that of the melt-quenched amorphous layer. The as-deposited state can, however, be transformed into a modified amorphous state equivalent to that obtained by melt quenching a previously crystalline layer. This allows the determination of the optical constants and crystallization speeds of the amorphous state written during optical recording.
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The laser-induced crystallization behavior of GeTe-based amorphous alloys has been measured with a novel multipulse laser technique. This enables the composition dependence of the nucleation rate and crystal growth speed to be independently followed. Two types of crystallization are investigated. The first involves single-phase crystallization of quaternary alloys based on Ge39Sb9Te52, in which the composition dependence of nucleation and growth is followed as Se, S, Sn, and Si are included. Both the nucleation rate and crystal-growth speed vary exponentially with the composition, and a correlation is found between crystallization behavior and bond strengths. The second involves multiphase crystallization in the GeSbTe ternary system. It is shown that the observed variations in crystallization behavior primarily arise from the composition dependence of nucleation rather than crystal growth. The implications of this finding for the importance of long range diffusion during crystallization in the GeSbTe system are discussed.
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