The strain relaxation, depth profiles of composition and density of dislocations in GeSn epilayers were studied by using the x-ray diffraction. Regions with uniform and graded composition, different levels of strain relaxation, and dislocation density were found in the GeSn layers grown at fixed growth conditions. At the initial stage of growth, the GeSn layer is under ~8 × 10 -3 compressive strain, and the Sn composition is close to the target value of 6.6%. With increasing layer thickness, the Sn content is enhanced by 0.85 ± 0.12% due to the relief of compressive strain down to ~5.0 × 10 -4 . The plastic strain relaxation is dominated by 60 • misfit dislocations at the GeSn/Ge interface, where their density is 3 × 10 5 cm −1 . The relaxed GeSn layer serves as a buffer for the high-quality GeSn overlayer with uniform and enhanced Sn composition. The laboratory-based x-ray diffraction is shown as a non-destructive reliable technique for strain, composition, and defects characterization, as an alternative to secondary ion mass spectrometry and transmission electron microscope techniques.
Fabrication of surfactant-modified DNA thin films with high uniformity, specifically DNA–CTMA, has been well considered via drop-casting and spin-coating techniques. However, the fabrication of thin films with pure DNA has not been sufficiently studied. We characterize the uniformity of thin films from aqueous salmon DNA solutions mixed with ethanol, methanol, isopropanol, and acetone. Measurements of thickness and macroscopic uniformity are made via a focused-beam ellipsometer. We discuss important parameters for optimum uniformity and note what the effects of solvent modifications are. We find that methanol- and ethanol-added solutions provide optimal fabrication methods, which more consistently produce high degrees of uniformity with film thickness ranging from 20 to 200 nm adjusted by DNA concentration and the physical parameters of spin-coating methods.
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