Le s p e c t r e de photoabsorption de SiCl,, en phase gaseuze a Bt6 mesur6 B l ' a i d e de l a m6thode du rendement t o t a l d ' i o n i s a t i o n , prgs du s e u i l K du chlore (r6gion 2800-3100 eV). Nous i n t e r p r e t o n s l e s resonances prbs du s e u i l en comparant ces s p e c t r e s avec ceux obtenus prgs du s e u i l SiK e t s u r l a base de deux c a l c u l s independants : un bas6 s u r une m6thode a b-i n i t i o avec i n t e r a c t i o n de configuration l ' a u t r e s u r l a m6thode de d i f f u s i o n multiple (MSMX,), l e s deux Btant appliques & l a molecule avec coeur Bquivalent.
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