Hybrid organic‐inorganic polymeric films are widely used in various areas, for encapsulation, dielectrics, super‐hydrophobic surfaces, membranes, and other applications, because of the features of their organic and inorganic components. The initiated chemical vapor deposition (iCVD) process is developed to synthesize hybrid polymeric films via this approach. However, the conventional iCVD process is based on laminar injection, and has difficulty depositing hybrid films with uniform thickness and composition over the large areas required by industry. In this work, the geometry of the iCVD chamber is newly designed to enable conformal and uniform deposition over an 8‐inch area, using a dual showerhead structure injection system. The inorganic concentration and deposition rate can be linearly controlled by adjusting the flow ratio of the inorganic precursor and organic monomer, up to 25% and 2.75 nm min−1, respectively. In addition, the dual showerhead injector reduces the source consumption by 37%, compared to a conventional laminar flow iCVD chamber, while depositing a film with the same thickness and composition. The surface roughness of the entire 8‐inch area is less than 0.6 nm, showing that very uniform and homogeneous hybrid polymeric films can be successfully synthesized over a large area. In addition, the variation in electrical capacitance between metal–insulator–metal (MIM) structure devices is measured, and is within 4.1% over the entire wafer for films deposited with the dual showerhead chamber, compared with 30% for the conventional iCVD chamber. The iCVD process with the dual showerhead structure enables the synthesis of conformal and uniform hybrid polymeric films over a large‐scale area with lower source consumption, compared to conventional iCVD.
and long-term retention characteristics, have increased continually. To meet those requirements, there have been studies about various combination of materials and electrodes, as well as their conducting filament (CF) behavior and formation mechanism in ReRAM.The formation mechanisms of the CF in ReRAM have been classified into valence change mechanism of oxygen vacancy generation (VCM) and electrochemical mechanism of metal ion migration (ECM). [2,3] VCM usually occurs in oxide-based ReRAM and relies on the conductive channels formed by the arrangement of the oxygen vacancies. The performance of oxide-based ReRAM depends on the combination of the oxide layer and the electrode and have been reported to show highly reliable characteristics. [4,5] Organic materials have been studied as prospective materials to realize ECM ReRAM devices, [6,7] and in particular polymers have exhibited information storage capability due to their ability to conduct and switch currents. [8] Furthermore, the functionalities of polymers can be tuned as needed to assist formation of metallic filament in the polymer matrix. [9][10][11] As opposed to VCM, ECM-based ReRAM shows lower reliability with a very large on/off ratio (>10 4 ), suitable to be used as a selector. [6,12] To take advantage in both organic and inorganic compound, perovskite materials have been studied and developed as active layer in ReRAM, and they have shown notable resistive memory performance. [13][14][15][16][17] The perovskite materials have advantages in their excellent charge mobility, low temperature process for simplifying the process, and cost-effectiveness of large-scale area. [16] In addition, perovskite materials have interesting functionalities, such as dielectric, ferroelectric, semiconducting, and light-sensitivity. [13,18] Furthermore, optoelectronic-based perovskite ReRAM devices have been introduced and studied as a neuromorphic device. [15,19] These advances have led to the incorporation of ECM and VCM in the active matrix to enable synergy in resistive switching behavior in ReRAM. [14] In this study, the active layer of the ReRAM device is chosen as organic-inorganic hybrid materials prepared by initiated chemical vapor deposition (iCVD) process which enables the synthesis of pure ultra-thin polymeric films without solvent. [20][21][22] The iCVD process offers the following advantages over perovskite processes: a room temperature process, [23] ultra-thin film Resistive random-access memory (ReRAM) has been considered for future memory devices, because of its low-power consumption and a high degree of integration. In this study, hybrid (H-) ReRAM devices are proposed using ultra-thin (<10 nm) Al, Hf, and Zr hybrid films prepared via initiated chemical vapor deposition (iCVD). The hybrid films homogeneously consist of organic and inorganic components, which allow simultaneous metal atoms migration and oxygen vacancy generation. Regardless of hybrid matrix, H-ReRAMs show highly reliable performance results (on/off ratio >10 4 , endurance >10 6 , retent...
With the recent interest in data storage in flexible electronics, highly reliable charge trap-type organic-based non-volatile memory (CT-ONVM) has attracted much attention. CT-ONVM should have a wide memory window, good endurance, and long-term retention characteristics, as well as mechanical flexibility. This paper proposed CT-ONVM devices consisting of band-engineered organic-inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5-trimethyl-1,3,5,-trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10 4 cycles, and charge retention of up to 71% after 10 8 s even under the 2% strained condition. The CT-ONVM device using the hybrid dielectric stacks outperforms other organic-based charge trap memory devices and is even comparable in performance to conventional inorganic-based poly-silicon/oxide/nitride/oxide/silicon structures devices. The CT-ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.
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