Three different driving schemes are tested for a plasma reactor designed to abate the greenhouse gases emitted by the semiconductor industry. The reactor and electrodes all have a concentric annular shape, which allows them to be easily connected to pre-existing pipelines without any disturbance to the exhaust stream. The destruction and removal efficiencies are measured for CF4 by varying the O2/CF4 ratio and pressure. The influences of adding O2 and H2O to the byproducts of the CHF3 abatement process are investigated by analyzing the spectra resulting from Fourier transform infrared spectroscopy measurements. Based on the experimental results we suggest an appropriate combination of driving scheme and reactant gas species for efficient and economical abatement of a mixture of CHF3 and CF4. Then, the optimal flow rate of the reactant gas is presented. Finally, the reduction rates for global warming emissions are estimated to demonstrate the feasibility of using our device for abatement of greenhouse gases emitted by the semiconductor industry.
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