We have demonstrated state-of-the-art characteristics of AlGaN/GaN-on-Si heterojunction field effect transistors (HFETs) employing dual field plates. Both gate and drain field plate lengths were optimized in order to maximize the breakdown voltage. Great care was taken not only to optimize the field plate lengths but also to develop processing technologies such as mesa-first prepassivation, a recessed ohmic contact, and a sloped gate. A breakdown voltage of 1590 V with a specific on-resistance of 1.86 m cm 2 was achieved for the gate-to-drain distance of 15 m in which the gate and drain field plate lengths were 2 and 1 m, respectively. #
In this study, we fabricated AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high voltage switching applications where both the field plate length and the gate-to-drain distance were varied for structural optimization. A tapered gate was fabricated in conjunction with the field plate in order to effectively suppress the high electric field at the gate edge. Regardless of the gate-to-drain distance, which was varied from 7 to 20 µm, the highest breakdown voltage was obtained with a short field plate length (i.e., 2 -3 µm), and the breakdown voltage monotonically decreased with increasing field plate length. A breakdown voltage of 1200 V with an on-resistance of 3.7 mΩ·cm 2 was achieved using a gate-to-drain distance of 20 µm and a field plate length of 3 µm.
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