Most members of the ferromagnetic rare-earth nitride series display doping control over electron transport, with nitrogen vacancies being the most common donor. This paper reports the control and characterization of vacancies in one of the fourteen in the series, DyN. Electrical transport and optical spectra in films with controlled concentrations of vacancies show a pair of in-gap impurity levels ∼ 0.4 eV below the conduction band minimum and a third impurity level that lies nearly coincident with the conduction band minimum. Electron transport is found to be activated for concentrations ≤1019 cm−3, with signatures of extended state conduction at the Fermi level for higher concentrations.

We report an investigation of the ferromagnetic semiconductor rare earth nitrides (RENs) for their potential for cryogenic-temperature electronics and spintronics application. We have indentified ohmic contacts suitable for the device structures that demand electron transport through interface layers, and grown REN/insulator/REN heterostructures that display tunnelling characteristics, an enormous 400% tunneling magnetoresistance and a hysteresis promising their exploitation in non-volatile magnetic random access memory.

We present a study of polycrystalline thin films of the rock salt rare earth nitride GdN grown on amorphous fused silica at ambient temperature with varying N 2 pressure. X-ray diffraction measurements show a strong (111) preferential orientation for all N 2 pressure and the signature of a secondary phase of GdN that develops as the N 2 pressure decreases. The secondary phase is found to have a smaller lattice parameter than the near-stoichiometric GdN. Raman spectroscopy, electrical and magnetic results support the coexistence of such mixed-phase samples with the lattice distortion originating from nitrogen vacancies. Significantly the magnetic data show an increase of the ferromagnetic onset temperature as the secondary phase develops, without affecting the soft ferromagnetic character of GdN.