The energy density state are the powerful factor for evaluate the validity of a material in any application. This research focused on examining the electrical properties of the Se6Te4- xSbx glass semiconductor with x=1, 2 and 3, using the thermal evaporation technique. D.C electrical conductivity was used by determine the current, voltage and temperatures, where the electrical conductivity was studied as a function of temperature and the mechanical electrical conduction were determined in the different conduction regions (the extended and localized area and at the Fermi level). In addition, the density of the energy states in these regions is calculated using the mathematical equations. The constants of energy density states are determined, namely the electron hopping distance, the width of the tails, and pre - exponential factor. The densities of the energetic states (extended N (Eext), localize N (Eloc) and at the Fermi states N (Ef) will be calculated in each of the regions. Moreover, the effect of partial substitution of Se with antimony on energy states and degree of randomness, results observed that the energy densities changing with an increase antimony Sb concentration.

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In this paper, the compound Tl0.9Hg0.1Sr2Ca2Cu3O8+δ was produced using solid status reaction procedure. The crystal construction of specimen was studied using x-ray deviation device. X-ray diffraction (XRD) study of the crystalline nature confirmed that the sample of compound has a lattice structure from a mixture for different phases, it is has a tetragonal structure. The crystal size was calculated and investigated from the traditional Debye-Scherer method and the modified method for it. It is note the approximate values of crystal size and crystallinity in percentage between the modified Scherer method and the traditional Debye-Scherer method change depending on the peaks intensity of XRD diagram. Furthermore, the sample was taken into account to determine the physical and microstructure factors such as crystal strain.

In this paper, a thin film of (Pb2-xSbxBa2Ca2Cu3O10) was deposited on glass substrate using Pulsed Laser Deposition (PLD) method with a power of 400 watts, a frequency of 6 Hz and a rate of 200 pulses. The results showed that the X-ray measurements of the prepared films (crystals). Then, optical and compositional measurements were performed on the films to determine the transmittance and absorption spectrum as a function of the incident wavelength, the value and type of the energy gap. It was found that the energy gap decreases after annealing to become (1.9 eV). As for the structural measurements, the degree of crystallinity and the growth rate of granules and films with direct transfer were calculated. These results are close to those which are obtained previously. The thin films were thermally annealed at 400 °C for two hours. Thermal annealing greatly affects the prepared films, as the annealing improves the properties of the films.

Poly (vinyl alcohol) doped with different Green methyl concentration (4%) by solvent cast method for different thickness the prepare films were 5, 10, 15,and 20 µm. Transmission and absorption spectrum have been recored in order to study the effect of increasing thickness on some opttical constans such as transmittance, reflectance, absorption coefficient, refractive index and extinction coefficient. The film study reveals that all these parameters affect by increasing the thickness. The films show indirect allowed interband transitions that influenced by the thicknesses , the optical energy gap has been increased from about (3.36 eV) for the (5 µm) , (3.39 eV) for the (10 µm) , (3.41 eV) for the (15µm) and (3.45 eV) for the (20 µm) .