BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.
BaTiO3/SrTiO3 and PbTiO3/PbZrO3 superlattice thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of BaTiO3/SrTiO3 superlattice thin film was higher than that of individual BaTiO3 or SrTiO3 film. Same result was obtained in the PbTiO3/PbZrO3 system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.
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