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We report a tunable, pulsed multiline intracavity optical parametric oscillator (IOPO) realized in an Nd:YVO4 laser using a two-dimensionally domain engineered MgO:LiNbO3 as simultaneously an electro-optic Bragg Q switch and a multichannel optical parametric downconverter. The MgO:LiNbO3 was periodically and aperiodically poled along the crystallographic y and x axes, respectively, to simultaneously satisfy the phase-matching conditions required by the two quasi-phase-matching devices. When Q switched by 1 kHz, 300 V pulses, three signal lines at 1518, 1526, and 1534 nm were simultaneously generated, each with a peak power of ∼1  kW from the IOPO at 8.3 W diode power at 50°C. Spectral tuning of the three-line IOPO with temperature was demonstrated.

We report on an internally Q-switched self-optical parametric oscillator (SOPO) based on a monolithic two-dimensional (2D) periodically poled Nd:MgO:LiNbO(3) (Nd:MgO:PPLN) integrating three device functionalities of a laser gain medium, an electro-optic Bragg Q-switch, and an optical parametric gain medium (OPGM). The quasi-phase-matching conditions required by the Bragg Q-switch and OPGM are both satisfied in the 2D nonlinear photonic crystal (NPC) structure formed in the Nd:MgO:PPLN. A 1525 nm signal with a pulse energy of ∼3.3 μJ (>350 W peak power) was obtained from the SOPO at 8.5 W diode pump power. An off-angle signal at 1612 nm, amplified by a unique gain-enhancement effect in this 2D NPC, was also observed. Tuning of the SOPO in the eye-safe region was demonstrated.

A significant reliability improvement in silicon–oxide–nitride–oxide–silicon (SONOS) flash memory devices by band-gap engineering of the nitride layer has been attained. The gradually varied reaction gas flow rate during deposition has generated special nitride films with non uniform composition profiles and band gaps. As a result, SONOS devices with partially Si-rich nitride structures have exhibited superior cycling endurance, radiation hardness, and data retention compared with devices with a uniform standard nitride. The marked improvement can be attributed to the increased charge-trapping/detrapping efficiency of the nitride layer since a significant number of highly accessible trapping levels have been created in the nitride that has a graded band gap. In addition, the deepened barrier heights between the nitride and its surrounding oxides may also reduce undesirable charge-loss probability and assist in charge storage. Because the dimension of flash memory cells is continuously shrinking, the proposed technique will be valuable for mass storage applications.