Amorphous La x Al y O films, containing 100, 50, and 30% La, were deposited by atomic layer deposition ͑ALD͒ on ultrathin SiO 2 films ͑1 nm͒. Changes in the depth profile, as a function of composition, and structure were examined by medium energy ion scattering and transmission electron microscopy. The electronic structure of the La x Al y O films was investigated by X-ray photoelectron spectroscopy as a function of La concentration and postdeposition annealing temperature. In the case of a pure La 2 O 3 film without Al 2 O 3 , the SiO 2 at the interfacial layer had been converted to SiO 2−x and La silicate during the ALD process. However, in case of a La 2 O 3 film with Al 2 O 3 , interfacial reactions were significantly suppressed. In particular, silicate formation in the La 2 O 3 films gradually increased with the increasing annealing temperature, while that in La 2 O 3 films incorporated Al 2 O 3 was suppressed up to an annealing temperature of 800°C.
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