Endometrial cancer (EC) is the most common gynaecologic malignancy in developed countries. The main challenge in EC management is to correctly estimate the risk of metastases at diagnosis and the risk to develop recurrences in the future. Risk stratification determines the need for surgical staging and adjuvant treatment. Detection of occult, microscopic metastases upstages patients, provides important prognostic information and guides adjuvant treatment. The molecular classification subdivides EC into four prognostic subgroups: POLE ultramutated; mismatch repair deficient (MMRd); nonspecific molecular profile (NSMP); and TP53 mutated (p53abn). How surgical staging should be adjusted based on preoperative molecular profiling is currently unknown. Moreover, little is known whether and how other known prognostic biomarkers affect prognosis prediction independent of or in addition to these molecular subgroups. This review summarizes the factors incorporated in surgical staging (i.e., peritoneal washing, lymph node dissection, omentectomy and peritoneal biopsies), and its impact on prognosis and adjuvant treatment decisions in an era of molecular classification of EC. Moreover, the relation between FIGO stage and molecular classification is evaluated including the current gaps in knowledge and future perspectives.

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Surface oxidation of GaAs and AlGaAs in low-energy Ar/O2 reactive ion beam etching Appl. Phys. Lett. 49, 204 (1986); 10.1063/1.97171Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ions J.Experiments have been performed in a beam apparatus where an Ar+ beam and a Cl o beam are directed simultaneously at a Si target. The apparatus allows independent variation -of the ion angle-of-incidence and the detection angle. Time-of-flight (TOF) distributions of the reaction product SiCI are measured for various CI~ to Ar+ flux ratios and various angles-of-incidence. These distributions can for the larger part well be fitted with collision cascade distributions, showing that at the parameter values chosen, the etch process in Si (CI 2 ,Ar+) is a chemically enhanced physical sputtering process. The observed variations of the binding energy U o obtained from the TOF distributions support this mechanism. A discussion in relation to similar studies on the etch rate and the composition of the surface and the altered layer leads to a consistent picture in support of the above model.